Display unit, method of manufacturing same, organic light emitting unit, and method of manufacturing same

ABSTRACT

A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit ( 1 ), wherein a plurality of organic EL devices ( 3 B), ( 3 G), and ( 3 R), in which a function layer ( 6 ) including a light emitting layer ( 11 ) is sandwiched between a lower electrode ( 4 ) made of a light reflective material and a semi-transmissive upper electrode ( 7 ), and which has a resonator structure in which light h emitted in the light emitting layer ( 11 ) is resonated using a space between the lower electrode ( 4 ) and the upper electrode ( 7 ) as a resonant section ( 15 ) and is extracted from the upper electrode ( 7 ) side are arranged on a substrate ( 2 ). In the respective organic EL devices ( 3 B), ( 3 G), and ( 3 R), the function layer ( 6 ) is made of an identical layer, and an optical distance L of the resonant section ( 15 ) is set to a value different from each other so that blue, green, or red wavelength region is resonated.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.10/571,845, filed on Mar. 15, 2006, which is the U.S. national stagedesignation of International Application No. PCT/JP04/013647 filed onMar. 15, 2005, which claims priority to JP 2003-327497, filed Sep. 19,2003, JP 2003-328989, filed Sep. 19, 2003 and JP 2004-261506 filed Sep.8, 2004, the entire contents of which are being incorporated herein byreference.

BACKGROUND

The present disclosure relates to a display unit, a manufacturing methodthereof, an organic light emitting unit, and a manufacturing methodthereof. The present invention particularly relates to a surface lightemitting type display unit, in which light emitting devices such as anorganic EL device are arranged and formed on the substrate and a desirelight emitting color can be selectively extracted, a manufacturingmethod thereof, an organic light emitting unit, and a manufacturingmethod thereof.

In recent years, as a display unit taking the place of the cathode raytube (CRT), research and development of light weighted and small flatdisplay units with small electric power consumption has been activelyimplemented. Of the foregoing, a display unit using an organic lightemitting unit including a self-light emitting display device (so-calledlight emitting device) such as an inorganic EL device and an organic ELdevice attracts attention as a display unit capable of being driven withlow electric power consumption.

As a configuration for providing a full-color display unit using suchlight emitting devices, for example, (1) a configuration in which lightemitting devices for emitting blue light, green light, and red light arearranged, (2) a configuration in which a color conversion filter iscombined with a white light emitting device or a blue light emittingdevice and the like have been proposed.

Of the foregoing, in the configuration (1), a configuration in whichhigh efficiency by interference of light extracted from each lightemitting device is attained by adjusting the film thickness of thetransparent electrode on the glass substrate on the light extractionside for every blue, green, and red light emitting device has beenfurther proposed (refer to Japanese Unexamined Patent ApplicationPublication No. 2003-142277).

Further, in the configuration (1), it is proposed that a light emittingdevice structure in which a function layer including a light emittinglayer is sandwiched between a reflecting electrode and asemi-transparent material layer is adopted, and a resonator structure inwhich light generated in the light emitting layer is multiple-interferedbetween the reflecting electrode and the semi-transparent material layerand is extracted from the semi-transparent material layer side is used.By adopting such a configuration, color purity of extracted light can beimproved, and extraction intensity in the vicinity of the centralwavelength of resonance can be improved. Therefore, in the display unitin which light emitting devices having the peak in the respective blue,green and red wavelengths are arranged in parallel, when the displayunit is structured by setting the optical distance of the resonatorstructure in the respective light emitting devices according to thewavelengths of extracted light from the respective blue, green, and redlight emitting devices, improvement of front luminance and improvementof color purity have been attained. Further, by extracting emitted lightthrough color filters, high quality display units with still highercolor purity and small view angle dependence, in which contrast loweringdue to panel surface reflection is prevented has been attained (refer toInternational Publication No. WO01-039554).

For the configuration for obtaining a full-color display unit usinglight emitting devices, some related arts have been proposed.Specifically, in order to improve emission efficiency of light emittedfrom the light emitting devices, the technique to change, of thefunction layer including a light emitting layer, the thickness of layersother than the light emitting layer for each color has been known (referto Japanese Unexamined Patent Application Publication No. 2000-323277).In the configuration, based on the difference in thickness among layersother than the light emitting layer, that is, based on the difference inlight path lengths in the light emission process, light emissionefficiency is improved for every color by utilizing light interferencephenomenon. Further, in order to lower resistance of the electrode layer(transparent electrode), the technique to insert a metal film (forexample, silver (Ag) being 50 nm or less thick) in the electrode layerhas been known (refer to Japanese Unexamined Patent ApplicationPublication No. 2002-324792). In the configuration, resistance of theelectrode layer is lowered by utilizing conductivity characteristics ofthe metal thin film. Further, in order to effectively generatehigh-luminance white light, the technique in which a light emittinglayer is structured by layering a blue light emitting layer forgenerating blue light, a green light emitting layer for emitting greenlight, and a red light emitting layer for generating red light has beenknown (refer to Japanese Unexamined Patent Application Publication No.H10-003990). In the configuration, based on the structuralcharacteristics of the light emitting layer structured by layering theblue light emitting layer, the green light emitting layer, and the redlight emitting layer, white light luminance is improved, and generationefficiency of the white light is improved.

However, in the foregoing configuration according to (1), since therespective light emitting devices for emitting blue light, green light,and red light are arranged on the substrate, the light emitting layerand the function layer including the light emitting layer in the lightemitting device of each color should be respectively formed. Forexample, when organic EL devices are used as a light emitting device,not only the light emitting layer, but also the function layer of theelectron injection layer, the electron transport layer, the holeinjection layer, and the hole transport layer should be respectivelydesigned according to the light emitting layers in some cases.Therefore, designing and forming the function layer in the lightemitting device of each color have been very complicated. Further, inmanufacturing such a light emitting device, the function layer includingthe light emitting layer is pattern formed by vapor deposition orcoating using a metal mask, furthermore by inkjet. However, when vapordeposition or coating using a metal mask is performed, there is a limitof alignment accuracy of the metal mask. When inkjet is used, there is alimit of the patterning precision. Therefore, it is hard to miniaturizeand jumboize the light emitting device and space between the lightemitting devices. Further, the foregoing limits are the cause ofpreventing realization of the display unit capable of higher definitiondisplay.

Meanwhile, in the configurations of (2) and (3), since light in the samewavelength region may be emitted in each light emitting device, it isnot necessary to separately form the function layer including the lightemitting layer for every color. Therefore, the manufacturing stepsincluding designing each light emitting device is simpler than of theconfiguration according to (1). However, in the configuration of (2),the color filter absorbs unnecessary light emitting component, andtherefore light emission efficiency is lowered, leading to large load onthe electric power consumption and device life. Further, it is difficultto provide filtering white light emission in the light emitting deviceinto blue, green, and red with favorable color purity by transmissioncharacteristics of the color filters capable of being mass-produced, andonly the display unit in which the extracted light has a wide wavelengthdistribution and poor color reproducibility can be produced. Further, inthe configuration of (3), there are problems of low conversionefficiency of the color conversion filters, difficulty of manufacturingthe color conversion filters, life of the color conversion filters,color purity of emitted light colors after color conversion and thelike, and therefore it is hard to put the configuration in practicaluse.

SUMMARY

In view of the foregoing, it is an object of the present invention toprovide a display unit in which designing and manufacturing can besimplified by simpler light emitting device structure, and highdefinition display and superior color reproducibility are enabled, amanufacturing method thereof, an organic light emitting unit, and amanufacturing method thereof.

A display unit according to a first aspect of the present invention forattaining such an object is a display unit, wherein a plurality of lightemitting devices in which a function layer including at least a lightemitting layer is sandwiched between a mirror made of a light reflectivematerial and a light semi-transmissive half mirror, and which have aresonator structure for resonating light emitted in the light emittinglayer by using a space between the mirror and the half mirror as aresonant section and extracting the light from the half mirror side arearranged on a substrate. Further, in particular, in the respective lightemitting devices, the light emitting layer is made of an identicallayer, and the optical distance of the resonant section between themirror and the half mirror is set to a plurality of different values.

In the display unit with such a configuration, light in wavelengthregions corresponding to the optical distance of the resonant sectionbetween the mirror and the half mirror set for the respective lightemitting devices is extracted in a state of being intensified byresonance from the respective light emitting devices having the lightemitting layer made of the identical layer. Therefore, while the lightemitting layer with the identical structure is used, by designing theoptical distance between the mirror and the half mirror in therespective light emitting devices so that extraction efficiency ofdesired light emitting wavelengths becomes the maximum, light ofdifferent light emission color with sufficient intensity is extractedfrom the respective light emitting devices.

Therefore, by arranging the respective light emitting devices, in whichthe optical distance between the mirror and the half mirror is adjustedso that extraction of blue, green, and red light emission becomes themaximum, a full-color display unit can be obtained.

Further, by forming the light emitting layer of the respective lightemitting devices from the identical layer, the whole function layerincluding the light emitting layer can be an identical structure.Therefore, it is not necessary to separately form the whole functionlayer for every light emitting color of the light emitting device, it isnot necessary to set adjustment tolerance between the respectivefunction layers between the light emitting devices necessary when thefunction layer is separately formed, leading to a narrowed pitch betweeneach pixel.

Further, when the whole function layer including the light emittinglayer is made of the identical layer, the mirror and the half mirror arestructured as an electrode, a transparent conductive film is sandwichedtogether with the function layer between the mirror and the half mirror,and the optical distance between the mirror and the half mirror isadjusted by the transparent conductive film. The transparent electrodefilm is pattern-formed by etching using as a mask resist patterns formedby lithography process, and therefore favorable patterning precision canbe obtained compared to the function layer requiring pattern formationby using a metal mask or by inkjet.

In particular, since the reflectance of the half mirror is in the rangefrom 0.1% to less than 50%, effects of the resonant structure can beappropriately inhibited. Therefore, in the direct view type displayunit, view angle dependence of luminance and chromaticity based on theresonator structure is appropriately reduced. Specifically, when thereflectance of the half mirror is 50% or more, resonant effect of theresonator structure is too strong, and therefore the half value width ofthe spectrum of light to be extracted from the resonant section becomestoo narrow, resulting in large view angle dependence of the displayunit. Meanwhile, when the reflectance of the half mirror is in the rangefrom 0.1% to less than 50%, the resonant effect of the resonatorstructure is appropriately inhibited, and therefore the half value widthof the spectrum of light to be extracted from the resonant sectionbecomes appropriately widened, resulting in small view angle dependenceof the display unit. That is, in order to configure the display unitcapable of displaying stably not depending on the view angle, thereflectance of the half mirror is preferably in the range from 0.1% toless than 50%, rather than the range of 50% or more. Further, when thereflectance of the half mirror is in the range from 0.1% to less than50%, by providing a color filter transmitting light in the wavelengthregions, which is resonated in the resonant section and extracted fromthe half mirror side above the half mirror, view angle dependence ofluminance and chromaticity in the direct view type display unit isfurther appropriately reduced by the color filter, and therefore displayperformance is improved.

In addition to that the reflectance of the half mirror is in the rangefrom 0.1% to less than 50%, the color filter is provided above the halfmirror, the mirror and the half mirror are structured as an electrode,and the transparent conductive layer together with the function layerare sandwiched between the mirror and the half mirror, when an opticaldistance L is in the range meeting the following formula (1) (in theformula (1), φ represents a phase shift (radian) generated when emittedlight generated in the light emitting layer is reflected on the bothends of the resonant section, L represents an optical distance of theresonant section, and λ represents a peak wavelength of the spectrum oflight desired to be extracted among the light) and when an opticaldistance Lt is set to meet the following formula (2) (in the formula(2), Lt represents an optical distance of the transparent conductivelayer, and Lf represents an optical distance of the function layerincluding the light emitting layer), the optical distances Lt and Lf inthe foregoing formula (2) are set so that the value of m in the formula(1) meets one combination of m=0, 0, 0, m=1, 0, 0, m=1, 1, 0, m=1, 1, 1,m=2, 1, 1, m=2, 2, 1, and m=2, 2, 2, respectively for the light emittingdevice for emitting blue light of the light emitting devices, the lightemitting device for emitting green light of the light emitting devices,and the light emitting device for emitting red light of the lightemitting devices. Thereby, view angle dependence of luminance andchromaticity is appropriately reduced while selection of the lightemitting wavelength and improvement of the maximum wavelength by theresonator structure are secured.

(2L)/λ+φ/(2π)=m (m is an integer)   (1)

Lt=L−Lf   (2)

A method of manufacturing the display unit according to the first aspectof the present invention is a method of manufacturing the display unitwith the foregoing configuration, wherein after the mirror or the halfminor is formed in the formation regions of the respective lightemitting devices on the substrate, a step of pattern-forming transparentconductive films with an optical distance different from each other anda step of forming the light emitting layer in block are performed inthis order or in the order opposite thereof.

In such a manufacturing method, on the minor or the half mirror in theformation regions of the respective light emitting devices, the lightemitting device provided with a lamination of the light emitting layerbecoming the identical structure by being formed in block and thetransparent conductive film having a different optical distance isformed. Further, since the light emitting layers are made as theidentical layer by forming in block, the whole function layer includingthe light emitting layer can be formed in block, leading to reduction inthe number of manufacturing steps including designing the functionlayer.

In particular, the half mirror is formed so that the reflectance is inthe range from 0.1% to less than 50%. Therefore, as described above, byappropriately inhibiting effects of the resonator structure, view angledependence of luminance and chromaticity based on the resonatorstructure for the direct view type display unit can be appropriatelyreduced.

Further, an organic light emitting unit according to the presentinvention is an organic light emitting unit including three organiclight emitting devices provided on a substrate, wherein the threeorganic light emitting devices have a structure in which a firstelectrode layer, a layer including a light emitting layer, and a secondelectrode layer are layered from the substrate side, and convert lightgenerated in the light emitting layer to light of three colors differentfrom each other and emit the converted light. Further, in particular,the first electrode layer has a structure in which a contact layer forimproving contact characteristics with the substrate, a resonant layerfor resonating light generated in the light emitting layer between theresonant layer and the second electrode layer, and a barrier layer forprotecting the resonant layer are layered from the substrate side, andthe thickness of the barrier layer is different from each other amongthe three organic light emitting devices.

In the organic light emitting unit with such a configuration, thethickness of the barrier layer composing the first electrode layer isdifferent from each other among the three organic light emittingdevices. Therefore, for example, when light of color equal to each otheramong the three organic light emitting devices is generated in the lightemitting layer, it is possible to convert the light generated in thelight emitting layer to three color light for image display (red light,green light, and blue light) by utilizing light interference phenomenonresulting from the difference of the resonant length among the threeorganic light emitting devices based on the difference of the thicknessof the barrier layer.

Further, a method of manufacturing an organic light emitting unitaccording to the present invention is a method of manufacturing anorganic light emitting unit including three organic light emittingdevices provided on a substrate, wherein the three organic lightemitting devices have a structure in which a first electrode layer, alayer including a light emitting layer, and a second electrode layer arelayered from the substrate side, and convert light generated in thelight emitting layer to light of three colors different from each otherand emit the converted light. Further, in particular, in the method, astep of forming the first electrode layer so that the first electrodelayer has a structure in which a contact layer for improving contactcharacteristics with the substrate, a resonant layer for resonatinglight generated in the light emitting layer between the resonant layerand the second electrode layer, and a barrier layer for protecting theresonant layer are layered from the substrate side is included, and thethickness of the barrier layer is different from each other among thethree organic light emitting devices.

In such a manufacturing method, for forming the first electrode layerhaving the characteristic structure that the thickness of the barrierlayer is different from each other among the three organic lightemitting devices continuously and with good reproducibility, only theexisting thin film process is used, and a new and complicatedmanufacturing process is not used.

Further, a display unit according to a second aspect of the presentinvention is a display unit including an organic light emitting unithaving a structure in which three organic light emitting devices areprovided on a substrate, wherein the three organic light emittingdevices of the organic light emitting unit have a structure in which afirst electrode layer, a layer including a light emitting layer, and asecond electrode layer are layered from the substrate side, and imagesare displayed by converting light generated in the light emitting layerto light of three colors different from each other and emitting theconverted light. In particular, the first electrode layer has astructure in which a contact layer for improving contact characteristicswith the substrate, a resonant layer for resonating light generated inthe light emitting layer between the resonant layer and the secondelectrode layer, and a barrier layer for protecting the resonant layerare layered, and the thickness of the barrier layer is different fromeach other among the three organic light emitting devices.

In the display unit with such a configuration, since the display unitincludes the foregoing organic light emitting unit. Therefore, it is notnecessary to separately coat the light emitting layer by using a metalmask in manufacturing the display unit, and it is not necessary toconvert light generated in the light emitting layer to other colors bycolor filters. Thereby, the display size can be jumboized, andutilization efficiency of light can be secured.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross section showing a cross sectional configuration of adisplay unit according to a first embodiment of the present invention;

FIG. 2 is a cross section showing another cross sectional configurationof the display unit according to the first embodiment of the presentinvention;

FIG. 3 is a cross section showing a cross sectional configuration of adisplay unit according to a second embodiment of the present invention;

FIG. 4 is a cross section showing an enlarged model of a cross sectionalstructure of organic EL devices and an auxiliary wiring shown in FIG. 3;

FIG. 5 is a cross section showing an enlarged model of a cross sectionalstructure of a layer including a light emitting layer shown in FIG. 4;

FIG. 6 is a cross section for explaining a manufacturing step of thedisplay unit according to the second embodiment of the presentinvention;

FIG. 7 is a cross section for explaining a step following FIG. 6;

FIG. 8 is a cross section for explaining a step following FIG. 7;

FIG. 9 is a cross section for explaining a step following FIG. 8;

FIG. 10 is a cross section for explaining a step following FIG. 9;

FIG. 11 is a cross section for explaining a step following FIG. 10;

FIG. 12 is a cross section for explaining a manufacturing step of adisplay unit according to a third embodiment of the present invention;

FIG. 13 is a cross section for explaining a step following FIG. 12;

FIG. 14 is a cross section for explaining a step following FIG. 13;

FIG. 15 is a cross section for explaining a step following FIG. 14;

FIG. 16 is a cross section for explaining a step following FIG. 15;

FIG. 17 is a cross section for explaining a step following FIG. 16;

FIG. 18 is a cross section for explaining a step following FIG. 17;

FIG. 19 is a cross section for explaining a step following FIG. 18;

FIG. 20 is a cross section showing another cross sectional configurationof the display unit according to the second and the third embodiments ofthe present invention;

FIG. 21 is a cross section showing an enlarged model of a crosssectional structure of organic EL devices and an auxiliary wiring shownin FIG. 20;

FIG. 22 shows spectrums of respective organic EL devices in a displayunit of Example 1;

FIG. 23 shows spectrums of the respective organic EL devices when colorfilters are provided for the display unit of Example 1;

FIG. 24 is a view showing transmittance characteristics of the colorfilters used for a simulation of FIG. 23;

FIG. 25 shows a spectrum of an organic EL device in a display unit ofComparative example 1;

FIG. 26 shows spectrums of the respective organic EL devices when colorfilters are provided for the display unit of Comparative Example 1;

FIG. 27 is a chromaticity diagram showing chromaticity values of eachdisplay unit and a CRT display;

FIG. 28 shows view angle dependence of spectrums of the respectiveorganic EL devices when the color filters are provided for the displayunit of Example 1; and

FIG. 29 shows view angle dependence of spectrums of the respectiveorganic EL devices when the color filters are provided for the displayunit of Comparative example 1.

DETAILED DESCRIPTION

Embodiments of the present invention will be hereinafter described indetail with reference to the drawings.

First Embodiment

First, descriptions will be given of a display unit according to a firstembodiment of the present invention with reference to FIG. 1. FIG. 1 isa cross section showing a model of a configuration example of thedisplay unit according to this embodiment. A display unit 1 shown in thefigure is a full color display unit in which each organic EL device 3B,3G, and 3R, from which light of each color of blue (B), green (G), andred (R) is extracted, is arranged and formed on a substrate 2. Thedisplay unit 1 displays images by utilizing organic EL phenomenon. Eachorganic EL Device 3B, 3G, and 3R has a configuration in which a lowerelectrode 4, a transparent conductive layer 5, a function layer 6, andan upper electrode 7 are layered from the substrate 2 side. The displayunit is configured as a top emission type display unit in which emittedlight h generated in the function layer 6 is extracted from the upperelectrode 7 side opposite of the substrate 2. Detailed structures ofrespective members will be hereinafter described.

The substrate 2 is made of, for example, glass, silicon, a plasticsubstrate, further a TFT substrate on which a thin film transistors(TFT) are formed or the like.

The lower electrode 4 provided on the substrate 2 is structured as amirror by using a conductive material with superior light reflectivity.In general, the lower electrode 4 is used as an anode or a cathode. Inthis embodiment, since the function layer 6 is provided above the lowerelectrode 4 with the transparent conductive layer 5 in between, thetransparent conductive layer 5 becomes an anode or a cathodepractically. Therefore, in this embodiment, the lower electrode 4 may bemade of a material with superior reflectivity.

Further, the lower electrode 4 shall be provided with patterning in theshape suitable for the driving method of the display unit 1. Forexample, when the driving method is simple matrix type, the lowerelectrode 4 is formed in a state of stripes, for example. Further, whenthe driving method is active matrix type including a TFT for every pixela, the lower electrode 4 is pattern-formed correspondingly to each of aplurality of arranged pixels a. In this case, each lower electrode 4 isconnected to a TFT similarly provided for each pixel through a contacthole (not shown) formed in the interlayer insulating film covering theTFTs.

The transparent conductive layer 5 provided on the lower electrode 4 ismade of a transparent electrode material, and particularly in thisembodiment, is used as an anode or a cathode practically as describedabove. When the transparent conductive layer 5 is used as an anode, atransparent conductive material with a large work function is selected.When the transparent conductive layer 5 is used as a cathode, atransparent conductive material with a small work function is selected.In FIG. 1, the case using the transparent conductive layer 5 as an anodeis representatively shown. The transparent conductive layer 5 becomingan anode by using, for example, indium tin oxide (ITO) shall beprovided.

The transparent conductive layer 5 is provided with patterning with eachfilm thickness (optical distance Lt) in each organic EL device 3B, 3G,and 3R. The transparent conducive layer 5 (5B, 5G, and 5R) provided foreach organic EL device 3B, 3G, and 3R may have the respectively setoptical distance Lt, and is not necessarily made of the same material.Details of setting the optical distance Lt of each transparentconductive layer 5B, 5G, and 5R will be described later.

The function layer 6 layered on the transparent conductive layer 5includes a plurality of layers made of an organic material. For example,in the function layer 6, a hole transport layer 10, a light emittinglayer 11, and an electron transport layer 12 are layered from the anodeside (in FIG. 1, the transparent conductive layer 5 side) and isprovided as an identical layer among each organic EL device 3B, 3G, and3R. Further, the function layer 6 may be pattern-formed for every pixela, or may be formed in a state of overall film.

Here, in order to obtain full color display in the display unit 1 ofthis embodiment, the emitted light h generated in a light emitting layer11 should have light emitting intensity in blue, green, and redwavelength regions. In particular, it is preferable that the functionlayer 6 has the maximum light emitting intensity in all wavelengthregions desired to be extracted of blue, green, and red and has smalllight emitting intensity in unnecessary wavelength regions. By usingsuch a function layer 6, a display unit with high light extractionefficiency in necessary light emitting regions and high color purity canbe obtained. The structure of such a function layer 6 can be voluntarilyselected from known structures and the like.

It is important that a film thickness of the function layer 6 (opticaldistance Lf) is set as described below in detail so that the spacebetween the lower electrode 4 and the upper electrode 7, that is thetotal thickness of the function layer 6 and the transparent conductivefilm 5 becomes a resonant section 15 for resonating the targetedwavelength.

The upper electrode 7 provided on such a function layer 6 is structuredas a half mirror. The upper electrode 7 is used as a cathode when thelower electrode 4 (transparent conductive layer 5) is an anode, or usedas an anode when the lower electrode 4 (transparent conductive layer 5)is a cathode. When the upper electrode 7 is used as an anode, as amaterial making the upper electrode 7, a conductive material with highwork function such as nickel, silver, gold, platinum, palladium,selenium, rhodium, ruthenium, iridium, rhenium, tungsten, molybdenum,chromium, tantalum, niobium, an alloy thereof, tin oxide (SnO₂), indiumtin oxide (ITO), zinc oxide, and titanium oxide is selectively used.Further, when the upper electrode 7 is used as a cathode (as in FIG. 1),as a material making the upper electrode 7, for example, a conductivematerial with small work function such as an alloy of an active metalsuch as Li, Mg, and Ca and a metal such as Ag, Al, and In is selectivelyused, or such conductive materials may be layered. Further, it ispossible that a thin compound layer of an active metal such as Li, Mg,and Ca and halogen such as fluorine and bromine, or oxygen is insertedin the space to the function layer 6. Since the upper electrode 7 isused as a half mirror becoming a side from which emitted light generatedin the function layer 6 is extracted, the light transmittance isadjusted by the film thickness and the like.

In particular, the reflectance of the upper electrode 7 structured as ahalf mirror is preferably in the range from 0.1% to less than 50%. Whenthe reflectance of the upper electrode 7 is in the foregoing range,effect of the resonator structure (resonant section 15) is appropriatelyinhibited, and therefore in the direct view type display unit 1, viewangle dependence of luminance and chromaticity based on the resonantsection 15 is appropriately decreased. Specifically, when thereflectance of the upper electrode 7 is 50% or more, resonant effect ofthe resonant section 15 is too strong, and therefore the half valuewidth of the spectrum of light to be extracted from the resonant section15 becomes too narrow, resulting in large view angle dependence of thedisplay unit 1. Meanwhile, when the reflectance of the upper electrode 7is in the range from 0.1% to less than 50%, the resonant effect of theresonant section 15 is appropriately inhibited, and therefore the halfvalue width of the spectrum of light to be extracted from the resonantsection 15 becomes appropriately widened, resulting in small view angledependence of the display unit 1. That is, in order to configure thedisplay unit 1 capable of displaying stably not depending on the viewangle, the reflectance of the upper electrode 7 is preferably in therange from 0.1% to less than 50%, rather than in the range of 50% ormore. The reason why the lower limit of the reflectance of the upperelectrode 7 is preferably “0.1% or more” is that when the reflectance isless than 0.1%, the upper electrode 7 no longer carries out thereflection function.

Further, when the display unit 1 is a simple matrix type display unit,the upper electrode 7 is formed in a state of stripe intersecting thestripe of the lower electrode 4. The layered intersection thereofbecomes the organic EL devices 3B, 3G, and 3R. Further, when the displayunit 1 is an active matrix type display unit, the upper electrode 7 maybe a film deposited so that the film covers the whole area of thesubstrate 2, and is used as a common electrode for each pixel.

An unshown driving power source for the purpose of current injection isconnected between the upper electrode 7 and the foregoing lowerelectrode 4.

Next, an optical distance L of the resonant section 15 between the lowerelectrode 4 and the upper electrode 7 and the optical distance Lt of thetransparent conductive layers 5B, 5G, and 5R in each organic EL device3B, 3G, and 3R will be described.

That is, in each organic EL device 3B, 3G, and 3R, the optical distanceL of the resonant section 15 between the lower electrode 4 and the upperelectrode 7 is respectively set to the value at which light in thedesired wavelength region set for each organic EL device 3B, 3G, and 3Ris resonated on the both ends of the resonant section 15. Therefore, forexample, where a phase shift generated when the emitted light hgenerated in the light emitting layer 11 is reflected on the both endsof the resonant section 15 is φ radian, the optical distance of theresonant section 15 is L, and a peak wavelength of the spectrum of lightdesired to be extracted among the emitted light h generated in the lightemitting layer 11 is λ, the optical distance L of the resonant section15 shall be in the range meeting the following formula (1).

(2L)/λ+φ/(2π)=m (m is an integer)   (1)

Then, for the organic EL device 3B, the peak wavelength λ=460 nm is setin the blue region as the peak wavelength λ of the spectrum of lightdesired to be extracted, and the optical distance L of the resonantsection 15 is calculated. Further, for the organic EL device 3G, thepeak wavelength λ=530 nm is set in the green region as the peakwavelength λ of the spectrum of light desired to be extracted, and theoptical distance L of the resonant section 15 is calculated. Further,for the organic EL device 3R, the peak wavelength λ=630 nm is set in thered region as the peak wavelength λ of the spectrum of light desired tobe extracted, and the optical distance L of the resonant section 15 iscalculated.

The optical distance L of each resonant section 15 is enough to be avalue meeting the foregoing formula (1), however, in particular, theoptical distance L is preferably the positive minimum value. For thecase that “the optical distance L of each resonant section 15 is thepositive minimum value,” descriptions will be hereinafter given indetail.

In each organic EL device 3B, 3G, and 3R, the function layer 6 includingthe light emitting layer 11 is made of the identical layer. Therefore,the optical distance L of the resonant section 15 is adjusted by theoptical distance Lt of each transparent conductive layer 5B, 5G, and 5R.In the result, where the optical distance of the transparent conductivelayers 5B, 5G, and 5R is Lt, and the optical distance of the functionlayer 6 including the light emitting layer 11 is Lf, the opticaldistance Lt (film thickness) of the transparent conductive layers 5B,5G, and 5R of each organic EL device 3B, 3G, and 3R shall be set to meetthe following formula (2).

Lt=L−Lf   (2)

where Lf is a certain value smaller than L.

Though not shown in the figure, when color filters are combined with thedisplay unit 1 having such a configuration, color filters which transmitonly the light h in the vicinity of the peak wavelength λ of thespectrum desired to be extracted from each organic EL device 3B, 3G, and3R are provided on the light extraction face side of each organic ELdevice 3B, 3G, and 3R.

Here, the case that “the optical distance L of each resonant section 15is the positive minimum value in the range to meet the foregoing formula(1)” is the case that the optical distances Lt and Lf in the foregoingformula (2) are set so that the value of m in the formula (1) meets m=0for the organic EL device 3B for emitting light hb in the bluewavelength region; m=0 for the organic EL device 3G for emitting lighthg in the green wavelength region; and m=0 for the organic EL device 3Rfor emitting light hr in the red wavelength region. However, the opticaldistances Lt and Lf in the foregoing formula (2) may be set so that thevalue of m in the formula (1) meets the conditions that m=1 for theorganic EL device 3B, m=0 for the organic EL device 3G, and m=0 for theorganic EL device 3R; conditions that m=1 for the organic EL device 3B,m=1 for the organic EL device 3G, and m=0 for the organic EL device 3R;conditions that m=1 for the organic EL device 3B, m=1 for the organic ELdevice 3G, and m=1 for the organic EL device 3R; conditions that m=2 forthe organic EL device 3B, m=1 for the organic EL device 3G, and m=1 forthe organic EL device 3R; conditions that m=2 for the organic EL device3B, m=2 for the organic EL device 3G, and m=1 for the organic EL deviceR; or conditions that m=2 for the organic EL device 3B, m=2 for theorganic EL device 3G, and m=2 for the organic EL device 3R, in additionto the foregoing conditions that m=0 for the organic EL device 3B, m=0for the organic EL device 3G, and m=0 for the organic EL device 3R. Inthis case, when the mirror and the half mirror which are identical toeach other are used, the larger the value of m becomes, the smaller thehalf value width of light to be extracted from the resonator structure(resonant section 15) becomes, resulting in improved color purity oflight to be extracted from the resonant section 15, but resulting inlowered luminance and increased view angle dependence. Therefore, it ispossible that the intensity, the color purity, and the view angledependence of light to be extracted from the resonant section 15 arecorrected by lowering the reflectance of the half mirror or increasingthe transmittance thereof. In the conditions of m=1 for the organic ELdevice 3R, blue light corresponding to the conditions of m=2 is alsoextracted from the organic EL device 3R together. In the conditions ofm=2 for the organic EL device 3R, blue light corresponding to theconditions of m=3 is also extracted from the organic EL device 3Rtogether. Therefore, in these cases, color filters are necessary inorder to secure favorable display performance.

In the display unit according to this embodiment, each organic EL device3B, 3G, and 3R having the function layer 6 formed as the identical layeris respectively structured as a resonator structure for resonating eachwavelength of blue, green and red. Thereby, even if the identicallystructured light emitting layer is used, only light hb, hg, and hr ofeach wavelength of blue, green, or red can be intensified by multipleinterference and extracted from each organic EL device 3B, 3G, and 3R.Therefore, a display unit capable of full color display is configured.

Further, since the light hb, hg, and hr to be extracted from eachorganic EL device 3B, 3G, and 3R is resonated in the resonant section 15of each organic EL device 3B, 3G, and 3R and extracted, only light indesired wavelength regions corresponding to blue, green, and red isextracted with sufficient intensity. Therefore, full color display withexcellent color reproducibility is enabled.

In particular, since the reflectance of the upper electrode 7 structuredas a half mirror is in the range from 0.1% to less than 50%, effects ofthe resonant section 15 can be appropriately inhibited. In the result,in the direct view type display unit 1, view angle dependence ofluminance and chromaticity based on the resonant section 15 isappropriately decreased. Therefore, selectivity and light intensity ofextracted light of the front of the display unit 1 can be increased, andview angle dependence of luminance and chromaticity can be maintainedlow. In this case, when color filters for transmitting light in thewavelengths, which is resonated in the resonant section 15 and extractedfrom the half mirror side are provided above the upper electrode 7structured as a half mirror, the foregoing view angle dependence ofluminance and chromaticity is further appropriately decreased by thecolor filters in the direct view type display unit 1. In the result,display performance can be improved.

Furthermore, as described above, in each organic EL device 3B, 3G, and3R, the whole function layer 6 including the light emitting layer 11 ismade of the identical layer. Therefore, it is not necessary toseparately form the function layer 6 formed by vapor deposition methodusing a metal mask or inkjet method for every organic EL device 3B, 3G,and 3R. Therefore, it is not necessary to set adjustment tolerancebetween each function layer 6 between each pixel a, which is necessarywhen the function layer 6 is separately formed, leading to a narrowedpitch between each pixel a. The optical distance L in each organic ELdevice 3B, 3G, and 3R is adjusted by the optical distance Lt of thetransparent conductive films 5B, 5G, and 5R. Therefore, the transparentconducive films 5B, 5G, and 5R need to be separately formed. However,the transparent conductive films 5B, 5G, and 5R are pattern-formed byetching using a resist pattern formed by lithography process as a mask.Therefore, patterning precision is more favorable than in the functionlayer 6 needed to be pattern-formed by using a metal mask orpattern-formed by inkjet.

By realizing miniaturization of the pitch between each pixel a as above,high definition full color display becomes enabled.

Further, since the light emitting layer 11 is made of the identicallayer, the function layer 6 made of an organic material with aparticularly large film thickness is no longer set. Therefore, aphenomenon that a driving voltage of only some organic EL devices isincreased does not occur, and electric power consumption is reduced. Inaddition, a driving circuit design considering driving conditionsdifferent among each color organic EL device is not necessary.

When the optical distance L of each resonant section 15 is the positiveminimum value in the range meeting the foregoing formula (1), asdisclosed in International Publication WO01-039554, the spectrum oflight to be extracted is maintained in the widest width in the rangethat light of the wavelength λ is multiple-interfered. Therefore, in thedisplay device, while the spectrum of light to be extracted ismaintained in a certain width, the peak intensity is improved bymultiple interference. In the result, in the display device, even if theview angle is deviated, the shift amount of the wavelength λ ismaintained small, and the color purity is improved in a wide view anglerange. Specifically, when the optical distances Lt and Lf in the formula(2) are set so that the value of m in the formula (1) meets one of m=0,0, 0; m=1, 0, 0; m=1, 1, 0; m=1, 1, 1; m=2,1,1; m=2, 2, 1; and m=2, 2, 2for the organic EL device 3B, the organic EL device 3G, and the organicEL device 3R, selection of light emitting wavelength and increase in themaximum wavelength by the resonator structure (resonant section 15) canbe secured, while view angle dependence of luminance and chromaticitybased on the resonant section 15 can be appropriately decreased.

Next, as a method of manufacturing a display unit according to thisembodiment, a method of manufacturing the display unit 1 with theforegoing configuration will be described.

First, the electrode material film making the lower electrode 4 isdeposited on the substrate 2. On the electrode material film, eachtransparent conductive layer 5B, 5G, and 5R having the optical distanceLt set for every organic EL device formed in each element section ispattern-formed. The pattern formation method of each transparentconductive layer 5B, 5G, and 5R is not particularly limited. When eachtransparent conductive layer 5B, 5G, and 5R is made of the samematerial, the pattern formation thereof is performed as follows.

First, a first transparent conductive material film is formed with thesame film thickness as a film thickness of the transparent conductivelayer 5B with the smallest optical distance Lt, and a first resistpattern is formed in a state that the first resist pattern covers onlythe pixel a in which the organic EL device 3B is arranged. Next, asecond transparent conductive material film is formed so that the totalfilm thickness of the first and the second transparent conductivematerial films becomes the same film thickness as a film thickness ofthe transparent conductive layer 5G with the second smallest opticaldistance Lt, and a second resist pattern is formed in a state that thesecond resist pattern covers only the pixel a in which the organic ELdevice 3G is arranged. Further, a third transparent conductive materialfilm is formed so that the total film thickness of the first, thesecond, and the third transparent conductive material films becomes thesame film thickness as a film thickness of the transparent conductivelayer 5R with the largest optical distance Lt, and a third resistpattern is formed in a state that the third resist pattern covers thepixel in which the organic EL device 3R is arranged.

Next, the third transparent conductive material film is etched by usingthe third resist pattern as a mask. Subsequently, when the second resistpattern is exposed, the second transparent conductive material film isetched by using the second resist pattern and the third resist patternas a mask. Still subsequently, when the first resist pattern is exposed,the first transparent conductive material film is etched by using thefirst resist pattern, the second resist pattern, and the third resistpattern as a mask. Thereby, the transparent conductive layer 5B made ofthe first transparent conductive material film is pattern-formed underthe first resist pattern, the transparent conductive layer 5G made ofthe first transparent conductive material film and the secondtransparent conductive material film is pattern-formed under the secondresist pattern, and the transparent conductive layer 5R made of thefirst transparent conductive material film, the second transparentconductive material film, and the third transparent conductive materialfilm is pattern-formed under the third resist pattern.

After the transparent conductive layers 5B, 5G, and 5R arepattern-formed as above, the lower electrode 4 is pattern-formed byetching the electrode material film using the first to the third resistpatterns as a mask.

After that, over the pattern-formed transparent conductive layers 5B,5G, and 5R and the pattern-formed lower electrode 4, the hole transportlayer 10, the light emitting layer 11, and the electron transport layer12 are sequentially layered and formed above the substrate 2, and thefunction layer 6 made of the identical layer is formed for each pixel ain block. Each layer 10 to 12 can be formed by using each organicmaterial synthesized by a known method and by applying a known methodsuch as vacuum vapor deposition and spin coat. Finally, the upperelectrode 7 is layered and formed so that the reflectance is in therange from 0.1% to less than 50%. Thereby, the display unit 1 in whichthe organic EL devices 3B, 3G, and 3R with the foregoing structure arearranged and formed can be obtained.

In the method of manufacturing a display according to this embodiment,in manufacturing the display unit 1 with the foregoing configuration,the function layer 6 including the light emitting layer 11 is formed inblock in each organic EL device 3B, 3G, and 3R, and thereby the numberof manufacturing steps including designing the function layer can bereduced. Therefore, the display unit 1 capable of high definitiondisplay can be realized by miniaturization of the light emitting deviceswith standardized function layer 6, and capable of display with superiorcolor reproducibility by extracting light of desired light emittingcolors with sufficient intensity can be manufactured more simply.

In particular, by forming the half mirror so that the reflectance is inthe range from 0.1% to less than 50%, as described above, effect of theresonant section 15 can be appropriately inhibited. In the result, forthe direct view type display unit 1, view angle dependence of luminanceand chromaticity based on the resonant section 15 can be appropriatelyreduced. Therefore, the high quality display unit 1 with more superiorcolor reproducibility and small view angle dependence can be realized.

In the embodiment described above, the structure of the so-called topemission type display unit 1 in which the emitted light h is extractedfrom the upper electrode 7 side opposite of the substrate 2 and themanufacturing method thereof have been described by using FIG. 1.However, as shown in FIG. 2, the present invention can be applied to aso-called bottom emission type display unit 1A in which the emittedlight h is extracted from the substrate 2 side. In this case, thedisplay unit 1A may be configured as in the foregoing embodiment, exceptthat a lower electrode 4A provided on the substrate 2 is structured as ahalf mirror by using a light reflexible material, and an upper electrode7A is structured as a mirror by using a material with favorable lightreflectivity, and effects similar to of the foregoing embodiment can beobtained. However, when active matrix type is adopted as a drivingmethod of the display unit, it is preferable to improve the apertureratio of the devices by using the top emission type shown in FIG. 1.

Further, in the foregoing embodiment, the transparent conductive layer 5is provided on the lower electrode 4 or 4A. However, the transparentconductive layer 5 may be provided between the function layer 6 and theupper electrode 7 or 7A. In this case, the lower electrode 4 or 4Abecomes an anode or a cathode practically, and the transparent electrode5 becomes a cathode or an anode practically instead of the upperelectrode 7 or 7A. Further, in the foregoing embodiment, the transparentconductive layer 5 is pattern-formed by using lithography. However, thetransparent conductive layer 5 may be pattern-formed by using a methodsuch as a vapor deposition mask and inkjet.

Further, in the foregoing embodiment, an example using each organic ELdevice, in which the lower electrode and the upper electrode arestructured as a mirror and a half mirror, and the space in between isused as a resonant section has been described. However, the display unitof the present invention is not limited to such a configuration. Thatis, the display unit of the present invention can be configured so thatthe lower electrode or the upper electrode is structured as a mirror,one of the layers composing the function layer is structured as a halfmirror, the light emitting layer 11 made of an identical layer issandwiched between the mirror and the half mirror, and the opticaldistance of the resonant section is adjusted by a film thickness oflayers composing the function layer other than the light emitting layer11 sandwiched between the mirror and the half mirror. Further, themirror and the half mirror may sandwich the light emitting layer 11 fromoutside of the upper electrode or the lower electrode. In this case,manufacturing steps can be simplified by making the light emitting layer11 as an identical layer.

Further, in the foregoing embodiment, the configuration of the displayunit using the organic EL device as a light emitting device has beendescribed. However, the present invention is not limited to the displayunit using the organic EL device, but can be widely applied to displayunits using a light emitting device capable of being structured as aresonant structure such as an inorganic EL device.

Second Embodiment

Next, with reference to FIG. 3, a display unit according to a secondembodiment of the present invention will be described. FIG. 3 shows across sectional configuration of a display unit 101.

The display unit 101 displays images by utilizing the organic ELphenomenon. For example, as shown in FIG. 3, a driving panel 110 as anorganic light emitting unit provided with an organic EL device 130 and adriving device (TFT: Thin Film Transistor) 112 for driving the organicEL device 130 and a sealing panel 150 are oppositely arranged, and thedriving panel 110 and the sealing panel 150 are bonded together with anadhesive layer 160 in between so that the organic EL device 130 issandwiched between the driving panel 110 and the sealing panel 150. Thedisplay unit 101 has, for example, a top emission type structure foremitting light e generated in the organic EL device 130 upward, that is,to outside of the sealing panel 150.

The driving panel 110 has a structure in which three organic EL devices130R, 130G, and 130B are provided as the foregoing organic EL device 130on a driving substrate 111 as a substrate. The driving panel 110specifically has a structure in which over the driving substrate 111,three TFTs 1121, 1122, and 1123 as a TFT 112, an interlayer insulatinglayer 113, a pair of wirings 114 provided for each TFT 1121 to 1123, aplanarizing layer 115 as a base region on which the organic EL devices130R, 130G, and 130B are arranged, the foregoing organic EL devices130R, 130G, hand 130B, an auxiliary wiring 140, an interlayer insulatinglayer 117, and a protective layer 120 are layered in this order.

The driving substrate 111 is intended to support the organic EL device130 and the TFT 112, and is made of, for example, an insulating materialsuch as glass.

The TFT 112 (1121, 1122, and 1123) is intended to drive the organic ELdevice 130 (130R, 130G, and 130B) to emit light. The TFT 112 includes agate electrode, a source electrode, and a drain electrode, which are notshown in FIG. 3. The gate electrode is connected to a scanning circuit(not shown), and both the source electrode and the drain electrode areconnected to the wiring 114 through a connection hole (not shown)provided in the interlayer insulating layer 113. The structure of theTFT 112 is not particularly limited, but for example, the structurethereof may be bottom gate type or top gate type.

The interlayer insulating layer 113 is intended to electrically separateeach TFT 1121 to 1123 from each other. For example, the interlayerinsulating layer 113 is made of an insulating material such as siliconoxide (SiO₂) and PSG (Phospho-Silicate Glass).

The wiring 114 functions as a signal line. For example, the wiring 114is made of a conductive material such as aluminum (Al) andaluminum-copper alloy (AlCu).

The planarizing layer 115 is intended to flatten the base region onwhich the organic EL device 130 is arranged, and to form a series oflayers composing the organic EL device 130 with high precision. Forexample, the planarizing layer 115 is made of an organic insulatingmaterial such as polyimide and polybenzo oxazole or an inorganicinsulating material such as silicon oxide (SiO₂).

The organic EL device 130 (130R, 130G, and 130B) emits the light e forimage display. Specifically, the organic EL device 130 converts light ofa given color (wavelength) generated in an after-mentioned layer 118including a light emitting layer to light of three colors (R: Red, G:Green, and B: Blue) corresponding to the light's three primary colorsand emits the converted light. The organic EL device 130R emits redlight er, and has a structure in which a lower electrode layer 116R as afirst electrode layer, the layer 118 including the light emitting layer,and an upper electrode layer 119 as a second electrode layer are layeredin the order from the driving substrate 111 side. The organic EL device130G emits green light eg, and has a structure in which a lowerelectrode layer 116G as a first electrode layer, the layer 118 includingthe light emitting layer, and the upper electrode layer 119 are layeredin the order from the driving substrate 111 side. The organic EL device130B emits blue light eb, and has a structure in which a lower electrodelayer 116B as a first electrode layer, the layer 118 including the lightemitting layer, and the upper electrode layer 119 are layered in theorder from the driving substrate 111 side. The organic EL devices 130R,130G, and 130B are respectively arranged correspondingly to, forexample, each TFT 1121 to 1123. The lower electrode layers 116R, 116G,and 116B are connected to the wiring 114 provided for each TFT 1121 to1123 through a connection hole (not shown) provided in the planarizinglayer 115. Detailed structures of the organic EL devices 130R, 130G, and130B will be described later (refer to FIG. 4 and FIG. 5).

The auxiliary wiring 140 is intended to decrease the resistancedifference of the organic EL device 130 by modulating the resistancedifference between an unshown electric power source and the upperelectrode layer 119. The auxiliary wiring 140 is electrically connectedto the upper electrode layer 119. The auxiliary wiring 140 is arrangedon the same level layer as of the organic EL devices 130R, 130G, and130B. For example, the auxiliary wiring 140 has a lamination structurealmost similar to of the organic EL device 130R. Detailed structure ofthe auxiliary wiring 140 will be described later (refer to FIG. 4).

The interlayer insulating layer 117 is intended to electrically separatethe organic EL devices 130R, 130G, 130B and the auxiliary wiring 140,and to determine the emission range of the light e (er, eg, and eb)emitted from each organic EL device 130R, 130G, and 130B. The interlayerinsulating layer 117 is arranged around the organic EL devices 130R,130G, and 130B and the auxiliary wiring 140 and is made of, for example,an organic insulating material such as polyimide and polybenzo oxazole,or an inorganic insulating material such as silicon oxide (SiO₂). Thethickness thereof is about 600 nm.

The protective layer 120 is intended to protect the organic EL device130, and is, for example, a passivation film made of a lighttransmissible dielectric material such as silicon oxide (SiO₂) andsilicon nitride (SiN).

The sealing panel 150 has a structure in which a color filter 152 isprovided over a sealing substrate 151.

The sealing substrate 151 is intended to support the color filter 152,and to enable the light er, eg, and eb emitted from the organic ELdevices 130R, 130G, and 130B to be transmitted and emitted outside. Thesealing substrate 151 is made of, for example, an insulating materialsuch as glass.

The color filter 152 is intended to guide the light er, eg, and ebrespectively emitted from the organic EL devices 130R, 130G, and 130B tooutside of the display unit 101. Further, when outside light entersinside the display unit 101 and is reflected by the organic EL device130 and the auxiliary wiring 140, the color filter secures contrast byabsorbing the reflected light. The color filter 152 includes threeregions arranged correspondingly to each organic EL device 130R, 130G,and 130B, that is, a red region 152R, a green region 152G, and a blueregion 152B. The red region 152R, the green region 152G, and the blueregion 152B are respectively made of, for example, a resin mixed with ared pigment, a green pigment, and a blue pigment.

The adhesive layer 160 is intended to bond the driving panel 110 and thesealing panel 150 together, and is made of, for example, an adhesivematerial such as a thermosetting resin.

In FIG. 3, in order to simplify the figure, only the three TFTs 112 (TFT1121 to 1123) and one set of organic EL devices 130 (three organic ELdevices 130R, 130G, and 130B) are shown. However, in practice, aplurality of TFTs 112 are provided in a state of matrix on the drivingsubstrate 111, and a plurality of sets of organic EL devices 130 arearranged correspondingly to the plurality of TFTs 112.

Next, with reference to FIG. 3 and FIG. 4, detailed structures of theorganic EL devices 130R, 130G, and 130B and the auxiliary wiring 140will be described. FIG. 4 shows a model of an enlarged cross sectionalstructure of the organic EL devices 130R, 130G, and 130B and theauxiliary wiring 140.

The organic EL devices 130R, 130G, and 130B have a lamination structurewith a total thickness different from each other, for example, as shownin FIG. 4.

The organic EL device 130B as a first organic light emitting device hasa structure in which, as described above, the lower electrode layer116B, the layer 118 including the light emitting layer, and the upperelectrode layer 119 are layered in the order from the driving substrate111 side. The lower electrode layer 116B has a structure in which acontact layer 1161B for improving contact characteristics with thedriving substrate 111, more particularly with the planarizing layer 115provided over the driving substrate 111, a resonant layer 1162B forresonating light generated in the layer 118 including the light emittinglayer between the resonant layer 1162B and the upper electrode layer119, and a barrier layer 1163B for protecting the resonant layer 1162Bare layered. In particular, the barrier layer 1163B has a monolayerstructure (barrier layer 1163B1). As described above, the organic ELdevice 130B has a resonant structure (kind of narrow band filter) forresonating light generated in the layer 118 including the light emittinglayer between the resonant layer 1162B and the upper electrode layer119. An optical distance L (LB) between the resonant layer 1162B and theupper electrode layer 119 meets the relation of the following formula(3B), for example. In particular, the organic EL device 130B convertslight generated in the layer 118 including the light emitting layer tothe blue light eb. More specifically, for example, in the top emissiontype display unit 101, the organic EL device 130B emits the light ebresonated between the resonant layer 1162B and the upper electrode layer119 through the upper electrode layer 119.

(2LB)/λ+φ/(2φ)=mB   (3B)

In the formula, regarding LB, λ, φ, and mB, LB represents an opticaldistance between the resonant layer 1162B (an end face PB1 as a firstend face adjacent to the barrier layer 1163B in the resonant layer1162B) and the upper electrode layer 119 (an end face PB2 as a secondend face adjacent to the layer 118 including the light emitting layer inthe upper electrode layer 119); λ represents a peak wavelength of thespectrum of light to be emitted; φ represents a phase shift of reflectedlight generated on the resonant layer 1162B (end face PB1) and the upperelectrode layer 119 (end face PB2); and mB represents 0 or an integer(for example, mB=0), respectively.

The contact layer 1161B is made of, for example, at least one metal fromthe group consisting of chromium (Cr), indium (In), tin (Sn), zinc (Zn),cadmium (Cd), titanium (Ti), aluminum (Al), magnesium (Mg), andmolybdenum (Mo); an alloy of the metal; a metal oxide thereof; a metalnitride thereof or the like. The thickness thereof is about 1 nm to 300nm. As an “alloy,” a “metal oxide,” and a “metal nitride,” for example,indium-tin alloy (InSn), indium-zinc alloy (InZn), aluminum-neodymiumalloy (AlNd), and aluminum-copper alloy silicide (AlCuSi) as an alloy;indium tin oxide (ITO) and indium zinc oxide (IZO) as a metal oxide;titanium nitride (TiN) as a metal nitride or the like can be cited. Inparticular, the contact layer 1161B is preferably made of, for example,ITO or IZO with superior contact characteristics and conductivity. Thethickness of the contact layer 1161B is preferably about from 1 nm to300 nm when the contact layer 1161B is made of ITO or IZO with superiorconductivity, and more preferably from about 3 nm to 50 nm consideringthe surface flatness of ITO. Meanwhile, when the contact layer 1161B ismade of chromium oxide (Cr₂O₃) with conductivity inferior to of ITO andIZO, the thickness of the contact layer 1161B is preferably from about 1mm to 20 nm in order to prevent connection resistance between the wiring114 and the lower electrode layer 116B from being excessively increased.

The resonant layer 1162B functions as a reflection layer for resonatinglight generated in the layer 118 including the light emitting layerbetween the resonant layer 1162B and the upper electrode layer 119. Forexample, the resonant layer 1162B is made of silver (Ag) or an alloycontaining silver (Ag). As an alloy containing silver, for example, analloy containing silver and at least one from the group consisting ofpalladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce),europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium(Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu), andgold (Au), specifically silver-palladium-copper alloy (AgPdCu) or thelike can be cited. The thickness of the resonant layer 1162B is thickerthan the thickness of the upper electrode layer 119 in the top emissiontype display unit 101, and is about from 100 nm to 300 nm.

The barrier layer 1163B (1163B1) is made of for example, a material withwork function larger than of the resonant layer 1162B, and the thicknessthereof is about 1 nm to 100 nm. Specifically, the barrier layer 1163Bis made of, for example, a light transmissible material containing atleast one metal from the group consisting of indium (In), tin (Sn), zinc(Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), andaluminum (Al); an alloy of the metal; a metal oxide thereof, or a metalnitride thereof. As an “alloy,” a “metal oxide,” and a “metal nitride,”for example, indium-tin alloy and indium-zinc alloy as an alloy; ITO,IZO, indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), cadmiumoxide (CdO), titanium oxide (TiO₂), and chromium oxide (CrO₂) as a metaloxide; titanium nitride and chromium nitride (CrN) as a metal nitride orthe like can be cited.

The organic EL device 130G as a second organic light emitting device hasa structure almost similar to of the organic EL device 130B, except thatthe structure of a barrier layer 1163G is different. That is, asdescribed above, the organic EL device 130G has a structure in which thelower electrode layer 116G, the layer 118 including the light emittinglayer, and the upper electrode layer 119 are layered in the order fromthe driving substrate 111 side. The lower electrode layer 116G has astructure in which a contact layer 1161G, a resonant layer 1162G, and abarrier layer 1163G are layered. In particular, the barrier layer 1163Ghas a two-layer structure, in which a lower barrier layer 1163G1 havinga thickness similar to of the barrier layer 1163B1 and an upper barrierlayer 1163G2 are layered in this order. The lower barrier layer 1163G1and the upper barrier layer 1163G2 may be made of, for example, the samematerial as each other, or a material different from each other. As theorganic EL device 130B, the organic EL device 130G has a resonantstructure for resonating light generated in the layer 118 including thelight emitting layer between the resonant layer 1162G and the upperelectrode layer 119. An optical distance L (LG) between the resonantlayer 1162G and the upper electrode layer 119 meets the relation of thefollowing formula (3G), for example. In particular, the organic ELdevice 130G converts light generated in the layer 118 including thelight emitting layer to the green light eg. More specifically, forexample, in the top emission type display unit 101, the organic ELdevice 130G emits the light eg resonated between the resonant layer1162G and the upper electrode layer 119 through the upper electrodelayer 119.

(2LG)/λ+φ/(2π)=mG   (3G)

In the formula, regarding LG, φ, and mG, LG represents an opticaldistance between the resonant layer 1162G (an end face PG1 as a firstend face adjacent to the barrier layer 1163G in the resonant layer1162G) and the upper electrode layer 119 (an end face PG2 as a secondend face adjacent to the layer 118 including the light emitting layer inthe upper electrode layer 119); φ represents a phase shift of reflectedlight generated on the resonant layer 1162G (end face PG1) and the upperelectrode layer 119 (end face PG2); and mG represents 0 or an integer(for example, mG=0), respectively.

The organic EL device 130R as a third organic light emitting device hasa structure almost similar to of the organic EL device 130B, except thatthe structure of a barrier layer 1163R is different. That is, asdescribed above, the organic EL device 130R has a structure in which thelower electrode layer 116R, the layer 118 including the light emittinglayer, and the upper electrode layer 119 are layered in the order fromthe driving substrate 111 side. The lower electrode layer 116R has athree-layer structure, in which a contact layer 1161R, a resonant layer1162R, and a barrier layer 1163R are layered from the driving substrate111 side. In particular, the barrier layer 1163R has a three-layerstructure in which a lower barrier layer 1163R1 having a thicknesssimilar to of the barrier layer 1163B1, an intermediate barrier layer1163R2 having a thickness similar to of the lower barrier layer 1163G1,and an upper barrier layer 1163R3 are layered in this order. The lowerbarrier layer 1163R1, the intermediate barrier layer 1163R2, and theupper barrier layer 1163R3 may be made of, for example, the samematerial as each other, or a material different from each other. As theorganic EL device 130B, the organic EL device 130R has a resonantstructure for resonating light generated in the layer 118 including thelight emitting layer between the resonant layer 1162R and the upperelectrode layer 119. An optical distance L (LR) between the resonantlayer 1162R and the upper electrode layer 119 meets the relation of thefollowing formula (3R), for example. In particular, the organic ELdevice 130R converts light generated in the layer 118 including thelight emitting layer to the red light er. More specifically, forexample, in the top emission type display unit 101, the organic ELdevice 130R emits the light er resonated between the resonant layer1162R and the upper electrode layer 119 through the upper electrodelayer 119.

(2LR)/λ+φ/(2.pi.)=mR   (3R)

In the formula, regarding LR, φ, and mR, LR represents an opticaldistance between the resonant layer 1162R (an end face PR1 as a firstend face adjacent to the barrier layer 1163R in the resonant layer1162R) and the upper electrode layer 119 (an end face PR2 as a secondend face adjacent to the layer 118 including the light emitting layer inthe upper electrode layer 119); φ represents a phase shift of reflectedlight generated on the resonant layer 1162R (end face PR1) and the upperelectrode layer 119 (end face PR2); and mR represents 0 or an integer(for example, mR=0), respectively.

Functions and materials of the contact layer 1161G, the resonant layer1162G and the barrier layer 1163G (the lower barrier layer 1163G1 andthe upper barrier layer 1163G2), which compose the organic EL device130G and functions and materials of the contact layer 1161R, theresonant layer 1162R and the barrier layer 1163R (the lower barrierlayer 1163R1, the intermediate barrier layer 1163R2, and the upperbarrier layer 1163R3), which compose the organic EL device 130R, arerespectively similar to of the contact layer 1161B, the resonant layer1162B, and the barrier layer 1163B (1163B1), which compose the organicEL device 130B.

For confirmation, in FIG. 4, for easy finding the structural differencesamong the organic EL devices 130R, 130G, and 130B, both the layer 118including the light emitting layer and the upper electrode layer 119 areshown separately for every organic EL device 130R, 130G, and 130B.However, in practice, for example, as shown in FIG. 3 and FIG. 4, thelayer 118 including the light emitting layer is continuously extendedthoroughly through on the lower electrode 116R (upper barrier layer1163R3) of the organic EL device 130R, on the lower electrode layer 116G(upper barrier layer 1163G2) of the organic EL device 130G, and on thelower electrode layer 116B (barrier layer 1163B1) of the organic ELdevice 130B. The upper electrode layer 119 is continuously extended sothat the upper electrode layer 119 covers the layer 118 including thelight emitting layer. That is, both the layer 118 including the lightemitting layer and the upper electrode layer 119 are shared by eachorganic EL device 130R, 130G, and 130B. A detailed structure of thelayer 118 including the light emitting layer will be described later(refer to FIG. 5).

The upper electrode layer 119 is made of, for example, at least onemetal from the group consisting of silver (Ag), aluminum (Al), magnesium(Mg), calcium (Ca), and sodium (Na), an alloy containing the metal orthe like. As an “alloy containing metal,” for example, magnesium-silveralloy (MgAg) or the like can be cited. In the top emission type displayunit 101, the thickness of the upper electrode layer 119 is, forexample, thinner than of the resonant layers 1162R, 1162G, and 1162B,and is about 1 nm to 10 nm. In particular, based on the fact that theorganic EL devices 130R, 130G, and 130B have a resonant structure asdescribed above, the upper electrode layer 119 functions as asemi-transparent reflection layer, which reflects light generated in thelayer 118 including the light emitting layer in order to resonate suchlight between the upper electrode layer 119 and the resonant layers1162R, 1162G, and 1162B, and which emits resonated light er, eg, and eboutside according to needs.

As shown in FIG. 4, thicknesses HR, HG, and HB of the layer 118including the light emitting layer are equal to each other among thethree organic EL devices 130R, 130G, and 130B (HR=HG=HB). The layer 118including the light emitting layer generates light of color (wavelength)equal to each other among the three organic EL devices 130R, 130G, and130B.

In particular, the thicknesses DR, DG, and DB of the barrier layers1163R, 1163G, and 1163B are different from each other among the threeorganic EL devices 130R, 130G, and 130B, specifically different fromeach other correspondingly to the three light er, eg, and eb emittedfrom the three organic EL devices 130R, 130G, and 130B. That is, thethicknesses DR, DG, and DB are set so that the three organic EL devices130R, 130G, and 130B can convert light generated in the layer 118including the light emitting layer to the red light er, the green lighteg, and the blue light eb and emit the converted light. Specifically,the thicknesses DR, DG, and DB are ranked in descending ordercorresponding to the red light er, the green light eg, and the bluelight eb emitted from the three organic EL devices 130R, 130G, and 130B(DR>DG>DB). The foregoing words, “convert light generated in the layer118 including the light emitting layer to the red light er, the greenlight eg, and the blue light eb and emit the converted light” meansthat, as shown in FIG. 4, in the process that light generated in dotsNR, NG, and NB in the layer 118 including the light emitting layer isresonated between the resonant layers 1162R, 1162G, and 1162B and theupper electrode layer 119 and then emitted through the upper electrodelayer 119, by utilizing light interference phenomenon resulting from thefact that resonant lengths are different among the three organic ELdevices 130R, 130G, and 130B, the wavelength of light having the samewavelength as each other when light is generated in NR, NG, and NB ischanged from each other for each organic EL device 130R, 130G, and 130Bwhen light is emitted, that is, the same wavelength is respectivelyshifted to the wavelength corresponding to red in the organic EL device130R, the wavelength corresponding to green in the organic EL device130G, the wavelength corresponding to blue in the organic EL device130B, and thereby finally the red light er, the green light eg, and theblue light eb are generated.

The auxiliary wiring 140 has a lamination structure similar to of thedevice with the largest total thickness among the organic EL devices130R, 130G, and 130B, that is, similar to of the organic EL device 130R,except that, for example, as shown in FIG. 4, the auxiliary wiring 140does not include the layer 118 including the light emitting layer inorder to decrease the wiring resistance as much as possible.

Next, with reference to FIG. 3 to FIG. 5, the detailed structure of thelayer 118 including the light emitting layer will be described. FIG. 5shows a model of an enlarged cross sectional structure of the layer 118including the light emitting layer.

The layer 118 including the light emitting layer is, for example, asdescribed above, shared by the organic EL devices 130R, 130G, and 130B.That is, the layer 118 including the light emitting layer has a commonstructure among each organic EL device 130R, 130G, and 130B, andgenerates white light as a given color (wavelength) light. The layer 118including the light emitting layer has a structure, for example, asshown in FIG. 4 and FIG. 5, in which a hole transport layer 1181, alight emitting layer 1182, an electron transport layer 1183 are layeredin the order from the lower electrode layers 116R, 116G, 116B side. Thelight emitting layer 1182 has a structure in which a red light emittinglayer 1182R for emitting red light, 1182G for emitting green light, and1182B for emitting blue light are layered from the hole transport layer1181 side. That is, by synthesizing red light, green light, and bluelight, which is respectively generated from the red light emitting layer1182R, the green light emitting layer 1182G, and the blue light emittinglayer 1182B, white light is generated as a result.

The hole transport layer 1181 is intended to improve injectionefficiency of holes to be injected into the light emitting layer 1182.For example, the hole transport layer 1181 also has a function as a holeinjection layer. The hole transport layer 1181 is made of, for example,an electron hole transport material such as 4,4′,4″-tris(3-methyl phenylphenyl amino)triphenylamine (m-MTDATA) and α-naphthyl phenyl diamine(αNPD), and is about 40 nm thick.

The red light emitting layer 1182R is intended to emit red light byrecombining part of electron holes injected from the lower electrodelayers 116R, 116G, and 116B through the hole transport layer 1181 andpart of electrons injected from the upper electrode layer 119 throughthe electron transport layer 1183. The red light emitting layer 1182R ismade of at least one from the group consisting of a red light emittingmaterial (fluorescent or phosphorescent), an electron hole transportablematerial, an electron transportable material, and a both charge(electron hole and electron) transportable material, and is about 5 nmthick. As a specific material of the red light emitting layer 1182R, forexample, 4-4′-bis(2,2-diphenyl vinyl)biphenyl (DPVBi) mixed with about30 wt % of 2,6-bis[(4′-methoxy diphenylamino)styril]-1,5-dicyanonaphthalene (BSN) can be cited.

The green light emitting layer 1182G is intended to emit green light byrecombining electron holes and electrons, which are not recombined inthe red light emitting layer 1182R. The green light emitting layer 1182Gis made of, for example, at least one from the group consisting of agreen light emitting material (fluorescent or phosphorescent), anelectron hole transportable material, an electron transportablematerial, and a both charge transportable material, and is about 10 nmthick. As a specific material of the green light emitting layer 1182G,for example, DPVBi mixed with about 5 wt % of coumarin 6 can be cited.

The blue light emitting layer 1182B emits blue light by recombiningelectron holes and electrons, which are not recombined in the red lightemitting layer 1182R and the green light emitting layer 1182G. The bluelight emitting layer 1182B is made of at least one from the groupconsisting of a blue light emitting material (fluorescent orphosphorescent), an electron hole transportable material, an electrontransportable material, and a both charge (electron hole and electron)transportable material, and is about 30 nm thick. As a specific materialof the blue light emitting layer 1182B, for example, DPVBi mixed withabout 2.5 wt % of 4-41′-bis[2,{4-N,N-diphenylamino)phenyl}vinyl]biphenyl(DPAVBi) can be cited.

The electron transport layer 1183 is intended to improve injectionefficiency of electrons injected into the light emitting layer 1182. Forexample, the electron transport layer 1183 also has a function as anelectron injection layer. The electron transport layer 1183 is made of,for example, 8-hydroxy quinoline aluminum (Alq₃), and is about 20 nmthick.

Next, with reference to FIG. 3 to FIG. 5, operation of the display unit101 will be described.

In the display unit 101, as shown in FIG. 3, the three organic ELdevices 130R, 130G, and 130B are driven by utilizing the TFT 112 (1121to 1123). That is, when a voltage is applied respectively between thelower electrode layers 116R, 116G, 116B and the upper electrode layer119, as shown in FIG. 5, in the light emitting layer 1182 of the layer118 including the light emitting layer, electron holes supplied from thehole transport layer 1181 and electrons supplied from the electrontransport layer 1183 are recombined, and thereby white light isgenerated. The white light is synthesized light obtained by synthesizingred light generated in the red light emitting layer 1182R, green lightgenerated in the green light emitting layer 1182G, and blue lightgenerated in the blue light emitting layer 1182B.

As shown in FIG. 4, in the process that the light e for image display isemitted outside the display unit 101 from the organic light emittingdevices 130R, 130G, and 130B, the wavelength of the white light isconverted by utilizing light interference phenomenon resulting from thefact that the resonant length of each organic EL device 130R, 130G, andthe 130B is different from each other, that is, the white light isconverted respectively to the red light er, the green light eg, and theblue light eb in the organic EL devices 130R, 130G, and 130B. Thereby,as shown in FIG. 3, since the red light er, the green light eg, and theblue light eb are emitted respectively from the organic EL devices 130R,130G, and 130B, images are displayed based on the three color light, er,eg, and eb.

When the light er, eg, and eb are emitted from the organic EL devices130R, 130G, and 130B, as shown in FIG. 4, in each organic EL device130R, 130G, and 130B, light generated in the layer 118 including thelight emitting layer is resonated between the resonant layers 1162R,1162G, 1162B of the lower electrode layers 116R, 116G, 116B and theupper electrode layer 119, and therefore the light generates multipleinterference. Thereby, the half value width of the light er, eg, and ebto be finally emitted from the organic EL devices 130R, 130G, and 130Bis decreased, and color purity is improved.

Next, with reference to FIG. 3 to FIG. 11, a method of manufacturing thedisplay unit 101 shown in FIG. 3 to FIG. 5 will be described. FIG. 6 toFIG. 11 are intended to explain manufacturing steps of a main section(lower electrode layers 116R, 116G, and 116B) of the display unit 101,and each figure shows a cross sectional structure corresponding to FIG.4. Regions SR, SG, and SB shown in FIG. 6 to FIG. 11 respectively showregions where the organic EL devices 130R, 130G, and 130B are formed inthe subsequent steps.

Descriptions will be hereinafter given of the whole manufacturing stepsof the display unit 101 briefly with reference to FIG. 3 to FIG. 5first, and then of formation steps of the main section of the displayunit 101, to which a method of manufacturing an organic light emittingunit according to the present invention is applied. Since the material,the thickness, and the structural characteristics of the series ofcomponents of the display unit 101 have been described in detail, thedescription thereof will be omitted as appropriate.

The display unit 101 can be manufactured by using an existing thin filmprocess including deposition technique such as sputtering, patterningtechnique such as photolithography, and etching technique such as dryetching and wet etching. That is, when the display unit 101 ismanufactured, as shown in FIG. 3, first, the plurality of TFTs 112 (TFT1121 to 11123) are pattern-formed in a state of matrix over the drivingsubstrate 111, and then the interlayer insulating layer 113 is formed sothat the interlayer insulating layer 113 covers the TFTs 1121 to 1123and the peripheral driving substrate 111. After that, a pair of wirings114 is pattern-formed for every TFT 1121 to 1123. Subsequently, theplanarizing layer 115 is formed so that the planarizing layer 115 coversthe wiring 114 and the peripheral interlayer insulating layer 113.Thereby, the base region on which the organic EL devices 130R, 130G, and130B will be formed in the subsequent steps is flattened. Subsequently,on the planarizing layer 115, one set of organic EL devices 130 (130R,130G, and 130B) is pattern-formed correspondingly to the arrangementposition of each TFT 1121 to 1123. Specifically, the organic EL device130R is formed by layering the lower electrode layer 116R, the layer 118including the light emitting layer, and the upper electrode layer 119 inthis order; the organic EL device 130G is formed by layering the lowerelectrode layer 116G, the layer 118 including the light emitting layer,and the upper electrode layer 119 in this order; and the organic ELdevice 130B is formed by layering the lower electrode layer 116B, thelayer 118 including the light emitting layer, and the upper electrodelayer 119 in this order. When the organic EL devices 130R, 130G, and130B are formed, for example, as shown in FIG. 3, the layer 118including the light emitting layer and the upper electrode layer 119 areformed so that the layer 118 including the light emitting layer and theupper electrode layer 119 are continuously extended through on the lowerelectrode layers 116R, 116G, and 116B, and are shared by each organic ELdevice 130R, 130G, and 130B. In addition, as shown in FIG. 3 and FIG. 4,the contact layers 1161R, 1161G, and 1161B composing part of the lowerelectrode layers 116R, 116G, and 116B are formed and contacted on thedriving substrate 111, more specifically on the planarizing layer 115provided so that the planarizing layer 115 covers the driving substrate111. Subsequently, the protective layer 120 is formed so that theprotective layer 120 covers the upper electrode layer 119, and therebythe driving panel 110 is formed.

Subsequently, the color filter 152 including the red region 152R, thegreen region 152G, and the blue region 152B is formed correspondingly tothe organic EL devices 130R, 130G, and 130B over the sealing substrate151, and thereby the sealing panel 150 is formed.

Finally, the driving panel 110 and the sealing panel 150 are bondedtogether by using the adhesive layer 160 so that the organic EL devices130R, 130G, and 130B are sandwiched between the driving substrate 111and the sealing substrate 151, and thereby the display unit 101 iscompleted.

When the main section of the display unit 101, the lower electrodelayers 116R, 116G, and 116B are formed, first, as shown in FIG. 6, byusing sputtering for example, the contact layer 1161 (thickness is about20 mm), the resonant layer 1162 (thickness is about 100 nm), and abarrier layer portion 11631 as a first barrier layer portion (thicknessis T1) are formed and layered in this order so that the drivingsubstrate 111, which is shown in FIG. 3, more particularly theplanarizing layer 115 provided on the driving substrate 111 is therebycovered. The contact layer 1161, the resonant layer 1162, and thebarrier layer portion 11631 are preparation layers to finally becomepart of each lower electrode layer 116R, 116G, and 116B by beingprovided with patterning by using etching process. When the contactlayer 1161 and the barrier layer portion 11631 are formed, as aformation material, the metal, the metal oxide, the metal nitride, orthe metal compound, which is described above, is used, for example, ITOis used. Further, when the resonant layer 162 is formed, as a formationmaterial, silver or the alloy containing silver, which is describedabove, is used, for example, silver-palladium-copper alloy (AgPdCu) isused. In this case, in particular, as described above with reference toFIG. 4, the thickness T1 of the barrier layer portion 11631 is set sothat the resonant length necessary to convert white light to the bluelight eb by utilizing light interference phenomenon in the organic ELdevice 130B can be secured based on the thickness T1.

Formation conditions of the contact layer 1161, the resonant layer 1162,and the barrier layer portion 11361 are as follows, for example. Thatis, as sputtering gas, mixed gas obtained by mixing 0.3% of oxygen (O₂)with argon (Ar) is used for forming the contact layer 1161 and thebarrier layer portion 11631, and argon gas is used for forming theresonant layer 1162. Further, as sputtering conditions, in all cases,pressure=about 0.5 Pa and DC output=about 500 W are used.

Subsequently, after the barrier layer portion 11631 is coated with aphotoresist to form a photoresist film (not shown), the photoresist filmis provided with patterning by using photolithography process, andthereby, as shown in FIG. 7, of the barrier layer portion 11631, on aregion SB as a first region where the organic EL device 130B is to beformed, an etching mask 171 as a first mask made of, for example, aphotoresist film is pattern-formed.

Subsequently, as shown in FIG. 7, by using sputtering for example, abarrier layer portion 11632 (thickness is T2) as a second barrier layerportion is formed so that the barrier layer portion 11632 covers theetching mask 171 and the peripheral barrier layer portion 11631. Thebarrier layer portion 11632 is a preparation layer to finally becomepart of each lower electrode layer 116R and 116G. When the barrier layerportion 11632 is formed, as described above with reference to FIG. 4,the thickness T2 of the barrier layer portion 11632 is set so that theresonant length necessary to convert white light to the green light egby utilizing light interference phenomenon in the organic EL device 130Gcan be secured based on the thickness (T1+T2). As a material of thebarrier layer portion 11632, for example, a material similar to thematerial of the barrier layer portion 11631 is used.

Subsequently, as shown in FIG. 8, of the barrier layer portion 11632, ona region SG as a second region where the organic EL device 130G is to beformed, an etching mask 172 as a second mask made of, for example, aphotoresist film is pattern-formed.

Subsequently, as shown in FIG. 8, by using sputtering for example, abarrier layer portion 11633 (thickness is T3) as a third barrier layerportion is formed so that the barrier layer portion 11633 covers theetching mask 172 and the peripheral barrier layer portion 11632. Thebarrier layer portion 11633 is a preparation layer to finally becomepart of the lower electrode layer 116R. When the barrier layer portion11633 is formed, as described above with reference to FIG. 4, thethickness T3 of the barrier layer portion 11633 is set so that theresonant length necessary to convert white light to the red light er byutilizing light interference phenomenon in the organic EL device 130Rcan be secured based on the thickness (T1+T2+T3). As a material of thebarrier layer portion 11633, for example, a material similar to thematerials of the barrier layer portions 11631 and 11632 is used.

Subsequently, as shown in FIG. 9, of the barrier layer portion 11633, ona region SR as a third region where the organic EL device 130R is to beformed, an etching mask 173 as a third mask made of, for example, aphotoresist film is pattern-formed.

Subsequently, by using a series of etching masks 171 to 173, the contactlayer 1161, the resonant layer 1162, the barrier layer portions 11631 to11633 are continuously etched and provided with patterning. Thereby, asshown in FIG. 10, of the contact layer 1161, the resonant layer 1162,the barrier layer portions 11631 to 11633, portions other than theportions covered with the etching masks 171 to 173 are selectivelyremoved. By the etching process, the contact layer 1161, the resonantlayer 1162, and the barrier layer portions 11631 to 11633 are separatedaccording to every region, SR, SG, and SB. Specifically, in the regionSB, a three-layer structure of the contact layer 1161, the resonantlayer 1162, and the barrier layer portion 11631 is left; in the regionSG, a four-layer structure of the contact layer 1161, the resonant layer1162, and the barrier layer portions 11631 and 11632 is left; and in theregion SR, the five-layer structure of the contact layer 1161, theresonant layer 1162, and the barrier layer portions 11631 to 11633 isleft. Since the etching masks 171 to 173 themselves are etched in theetching process, the thickness of the etching masks 171 to 173 isdecreased.

Finally, by removing the etching masks 171 to 173, as shown in FIG. 11,by the remaining structures of the contact layer 1161, the resonantlayer 1162, and the barrier layer portions 11631 to 11633, the lowerelectrode layers 116R, 116G, and 116B shown in FIG. 4 are completed.Specifically, in the region SB where the organic EL device 130B foremitting blue light eb is to be formed, the lower electrode layer 116Bhaving a lamination structure in which the contact layer 1161B, theresonant layer 1162B, and the barrier layer 1163B (1163B1) are layeredis formed, and the barrier layer 1163B is formed as a monolayerstructure composed of the barrier layer portion 11631 (barrier layer1163B1). Further, in the region SG where the organic EL device 130G foremitting green light eg is to be formed, the lower electrode layer 116Ghaving a lamination structure in which the contact layer 1161G, theresonant layer 1162G, and the barrier layer 1163G are layered is formed,and the barrier layer 1163G is formed as a two-layer structure composedof the barrier layer portion 11631 (lower barrier layer 1163G1) and thebarrier layer portion 11632 (upper barrier layer 1163G2). Further, inthe region SR where the organic EL device 130R for emitting the redlight er is to be formed, the lower electrode layer 116R having alamination structure in which the contact layer 1161R, the resonantlayer 1162R, and the barrier layer 1163R are layered is formed, and thebarrier layer 1163R is formed as a three-layer structure composed of thebarrier layer portion 11631 (lower barrier layer 1163R1), the barrierlayer portion 11632 (intermediate barrier layer 1163R2), and the barrierlayer portion 11633 (upper barrier layer 1163R3).

The foregoing thicknesses T1, T2, and T3 can be freely set as long asthe red light er, the green light eg, and the blue light eb can berespectively emitted in the organic EL devices 130R, 130G, and 130Bfinally. As an example, when the total thickness of the layer 118including the light emitting layer is about from 40 nm to 70 nm, thethicknesses of T1, T2, and T3 are about from 2 nm to 100 nm. As a morespecific example, when the total thickness of the layer 118 includingthe light emitting layer is about from 50 nm to 60 nm, T1 is about 2 nmto 20 nm, (T1+T2) is about from 20 nm to 50 nm, and (T1+T2+T3) is aboutfrom 50 nm to 80 nm. For reference, for example, the auxiliary wiring140 shown in FIG. 3 can be formed in parallel through a proceduresimilar to the formation procedure of the organic EL device 130R.

In the display unit according to this embodiment, as shown in FIG. 3 andFIG. 4, the lower electrode layers 116R, 116G, and 116B of the organicEL devices 130R, 130G, and 130B have the structures in which the contactlayers 1161R, 1161G, and 1161B; the resonant layers 1162R, 1162G, and1162B; and the barrier layers 1163R, 1163G, and 1163B are layered fromthe driving substrate 111 side. The thicknesses DR, DG, and DB of thebarrier layers 1163R, 1163G, and 1163B are different from each otheramong each organic EL device 130R, 130G, and 130B (DR>DG>DB). Therefore,for example, as described above as “operation of the display unit 101,”by utilizing light interference phenomenon resulting from the differenceof the resonant length among the organic EL devices 130R, 130G, and 130Bbased on the difference among the thicknesses DR, DG, and DB, whitelight generated in the layer 118 including the light emitting layer canbe converted to three color light, that is, the red light er, the greenlight eg, and the blue light eb. Therefore, in this embodiment, imagescan be displayed by utilizing the three color light er, eg, and eb.

In particular, in this embodiment, based on the structuralcharacteristics capable of constructing the foregoing display mechanism,differently from the traditional display unit described in the foregoing“BACKGROUND ART,” there are advantages in both the display performanceaspect and the manufacturability aspect as described below.

That is, regarding the manufacturing potency aspect, differently fromthe traditional display unit, in which separate coating by using a metalmask is needed when three kinds of light emitting layers arevapor-deposited due to the structural factor that the three kinds oflight emitting layers capable of separately generating each color lightare utilized for emitting three color (R, G, and B) light, as shown inFIG. 5, in this embodiment, one kind of light emitting layer 1182capable of generating single color light (white light) is utilized foremitting the three color light er, eg, and eb, that is, the lightemitting layer 1182 is standardized among each organic EL device 130R,130G, and 130B, and it is not necessary to separately coat the lightemitting layer 1182 by using a metal mask. Therefore, the display sizeis possibly jumboized.

Meanwhile, regarding the display performance aspect, differently fromthe traditional display unit, in which based on utilization of the lightemitting layer for generating white light, only the high concentrationand thick color filter for color conversion is utilized to convert thewhite light to three color (R, G, and B) light, in this embodiment,instead of using only the color filter for color conversion, as shown inFIG. 3 and FIG. 4, together with the color filter 152, lightinterference phenomenon resulting from the difference in the resonantlength among the organic EL devices 130R, 130G, and 130B based on thedifference among the thicknesses DR, DG, and DB as described above isused to convert white color to the three color light er, eg, and eb.Therefore, the concentration of the color filter 152 may be low and thethickness thereof may be thin. In the result, in color conversion, lightutilization loss resulting from light absorption of the color filter 152can be prevented from being increased, that is, light utilizationefficiency can be secured.

Therefore, in this embodiment, since it becomes possible to obtainadvantages in both the display performance aspect and the manufacturingpotency aspect, securing display performance and securing manufacturingpotency can be compatible with each other. In this case, in particularin the manufacturing aspect, based on the fact that separate coating ofthe light emitting layer 1182 using a metal mask becomes unnecessary, itbecomes possible to prevent defect in the light emitting layer 1182caused by particles mixed therein in the separate coating operation.

Further, in this embodiment, the organic EL devices 130R, 130G, and 130Brespectively include the resonant layers 1162R, 1162G, and 1162B, andhave the resonant structure, in which light is resonated between theresonant layers 1162R, 1162G, and 1162B and the upper electrode layer119. Therefore, as described as “operation of the display unit 101,”color purity of the light er, eg, and eb is improved. Therefore, foreach light er, eg, and eb, high quality spectrum with high peakintensity and narrow wavelength width can be secured, and images withsuperior color reproducibility can be displayed. In this case, inparticular, when the resonant layers 1162R, 1162G, and 1162B are made byusing high reflective silver or an alloy containing silver, utilizationefficiency of light to be resonated is improved, and therefore displayperformance can be more improved.

Further, in this embodiment, as described above, the barrier layers1163R, 1163G, and 1163B carry out a function for providing thedifference in the resonant length among the organic EL devices 130R,130G, and 130B, and carry out a function for protecting the resonantlayers 1162R, 1162G, and 1162B. Therefore, the resonant layers 1162R,1162G, and 1162B are prevented from reacting with oxygen or sulfur inthe atmosphere and being oxidized or corroded, or from reacting with achemical used in the manufacturing steps of the display unit 101 andbeing corroded.

Further, in this embodiment, the lower electrode layers 116R, 116G, and116B include the contact layers 1161R, 1161G, and 1161B, which areintended to improve contact characteristics with the planarizing layer115. Therefore, the lower electrode layers 116R, 116G, and 116B can befirmly fixed to the planarizing layer 115.

Further, in this embodiment, the barrier layers 1163R, 1163G, and 1163Bare made of the material with a work function larger than of theresonant layers 1162R, 1162G, and 1162B. Therefore, the injection amountof electron holes into the light emitting layer 1182 can be increased.

In the method of manufacturing a display unit according to thisembodiment, for forming the lower electrode layers 116R, 116G, and 116Bcharacterized in that the thicknesses DR, DG, and DB of the barrierlayers 1163R, 1163G, and 1163B are different from each other among eachorganic EL device 130R, 130G, and 130B, only the existing thin filmprocess is used, and a new and complicated manufacturing processes arenot used. Furthermore, based on utilization of the existing thin filmprocess, the lower electrode layers 116R, 116G, and 116B can be formedcontinuously and with good reproducibility. Therefore, in thisembodiment, the display unit 101 including the lower electrode layers116R, 116G, and 116B can be easily and stably manufactured.

Third Embodiment

Next, a third embodiment of the present invention will be described.

A display unit according to this embodiment has a structure similar tothe structure (FIG. 3 to FIG. 5) of the display 101 described in theforegoing second embodiment, except that the formation steps of thelower electrode layers 116R, 116G, and 116B are different, and thedisplay unit according to this embodiment can be manufactured by usingmanufacturing steps similar to the manufacturing steps of the displayunit 101. In this display unit, in particular, for example, in order toprecisely form the barrier layers 1163R, 1163G, and 1163B of the lowerelectrode layers 116R, 116G, and 116B, it is preferable that the barrierlayer portion 11631 is made of tin oxide (SnO₂) or chromium oxide (CrO),the barrier layer portion 11632 is made of ITO, and the barrier layerportion 11633 is made of IZO.

FIG. 12 to FIG. 19 are intended to explain the manufacturing steps ofthe lower electrode layers 116R, 116G, and 116B of the display unit. Allfigures represent a cross section structure corresponding to FIG. 4. InFIG. 12 to FIG. 19, the same components as the components described inthe foregoing second embodiment are affixed with the same symbols.

When the lower electrode layers 116R, 116G, and 116B are formed, first,as shown in FIG. 12, by using sputtering for example, the contact layer1161 (thickness is about 20 nm), the resonant layer 1162 (thickness isabout 100 nm), the barrier layer portion 11631 as a first barrier layerportion (thickness is T1), a barrier layer portion 11632 as a secondlayer section (thickness is T2), a barrier layer portion 11633 as athird barrier layer portion (thickness is T3) are formed and layered inthis order over the planarizing layer 115. As a material of the contactlayer 1161 and the barrier layer portions 11631 to 11633, the metal, themetal oxide, the metal nitride, or the metal compound described in theforegoing second embodiment is used. For example, as the contact layer1161 and the barrier layer portion 11632, ITO is used; as a barrierlayer portion 11631, tin oxide (SnO₂) is used; and as a barrier layerportion 11633, IZO is used. Further, as a material of the resonant layer1162, silver or the alloy containing silver, which are described in theforegoing second embodiment, is used, for example,silver-palladium-copper alloy (AgPdCu) is used. When the barrier layerportions 11631 to 11633 are formed, as described above with reference toFIG. 4, the thicknesses T1 to T3 are respectively set so that theresonant length necessary to convert white light to the red light er,the green light eg, and the blue light eb by utilizing lightinterference phenomenon in the organic EL devices 130R, 130G, and 130Bcan be secured. In particular, when the barrier layer portion 11632 madeof ITO is formed, for example, in order to enable the barrier layerportion 11632 to function as a stop layer for stopping progress ofetching process when the barrier layer portion 11633 made of IZO iswet-etched in the subsequent step, the barrier layer portion 11632 isdeposited at high temperatures, or anealed and crystallized after thedeposition. When the contact layer 1161, the resonant layer 1162, andthe barrier layer portions 11631 to 11633 are formed and layered byusing sputtering, for example, such series of layers are continuouslyformed in the same vacuum environment.

Formation conditions of the contact layer 1161, the resonant layer 1162,and the barrier layer portions 11631 to 11633 are as follows, forexample. That is, as sputtering gas, mixed gas obtained by mixing 0.3%of oxygen (O₂) with argon (Ar) is used for forming the contact layer1161 and the barrier layer portion 11632, argon gas is used for formingthe resonant layer 1162, mixed gas obtained by mixing 0.5% of oxygen(O₂) with argon (Ar) is used for forming the barrier layer portion11631, and mixed gas obtained by mixing 1.0% of oxygen (O₂) with argon(Ar) is used for forming the barrier layer portion 11633. Further, assputtering conditions, in all cases, pressure=about 0.5 Pa and DCoutput=about 500 W are used.

Subsequently, as shown in FIG. 13, of the barrier layer portion 11633,on the region SR as a first region where the organic EL device 130R isto be formed, an etching mask 181 as a first mask made of, for example,a photoresist film is pattern-formed.

Subsequently, the barrier layer portion 11633 is etched and providedwith patterning by using wet etching together with the etching mask 181,and thereby as shown in FIG. 14, of the barrier layer portion 11633, theportions other than the portions covered by the etching mask 181 isselectively removed, and the barrier layer portion 11633 is left in theregion SR, and the barrier layer portion 11632 is exposed in theperipheral region of the region SR. When the wet etching process isperformed, as an etchant, for example, mixed acid of phosphoric acid(H₃PO₄), nitric acid (HNO₃), and acetic acid (CH₃COOH) or oxalic acid(C₂H₂O₄) is used. In the wet etching process, as described above, thebarrier layer 11632 made of crystallized ITO with tolerance to theetchant functions as a stop layer, and progress of the etching processis stopped when etching of the barrier layer portion 11633 is completed.Therefore, the etching process is prevented from being performed for thebarrier layer portion 11632.

Subsequently, as shown in FIG. 15, of the exposed face of the barrierlayer portion 11632, on the region SG as a second region where theorganic EL device 130G is to be formed, an etching mask 182 as a secondmask made of, for example, a photoresist film is pattern-formed. Whenthe etching mask 182 is formed, for example, according to needs, theused etching mask 181 is once removed before the etching mask 182 isformed, and then the etching mask 181 is newly formed again at the sametime when the etching mask 182 is formed.

Subsequently, the barrier layer portion 11632 is etched and providedwith patterning by using wet etching together with the etching masks 181and 182, and thereby as shown in FIG. 16, of the barrier layer portion11632, the sections other than the sections covered by the etching masks181 and 182 are selectively removed, and the barrier layer portion 11632is left in the regions SR and SG, and the barrier layer portion 11631 isexposed in the peripheral region of the regions SR and SG. When the wetetching process is performed, as an etchant, for example, hydrochloricacid (HCl), acid containing hydrochloric acid, mixed acid ofhydrofluoric acid and nitric acid is used. In the wet etching process,as in the foregoing barrier layer portion 11632, the barrier layer 11631made of tin oxide with tolerance to the etchant functions as a stoplayer, and progress of the etching process is stopped when etching ofthe barrier layer portion 11632 is completed. Therefore, the etchingprocess is prevented from being performed for the barrier layer portion11631.

Subsequently, as shown in FIG. 17, of the exposed face of the barrierlayer portion 11631, on the region SB as a third region where theorganic EL device 130B is to be formed, an etching mask 183 as a thirdmask made of, for example, a photoresist film is pattern-formed. Whenthe etching mask 183 is formed, for example, according to needs, theused etching masks 181 and 182 are once removed before the etching mask183 is formed, and then the etching masks 181 and 182 are newly formedagain at the same time when the etching mask 183 is formed.

Subsequently, by using dry etching together with the etching masks 181to 183, the contact layer 1161, the resonant layer 1162, and the barrierlayer portion 11631 are continuously etched and provided withpatterning. Thereby, as shown in FIG. 18, of the contact layer 1161, theresonant layer 1162, and the barrier layer portion 11631, portions otherthan the portions covered by the etching masks 181 to 183 areselectively removed. By the etching process, the contact layer 1161, theresonant layer 1162, and the barrier layer portion 11631 are separatedfor every region, SR, SG, and SB. Specifically, in the region SR, thefive-layer structure of the contact layer 1161, the resonant layer 1162,and the barrier layer portions 11631 to 11633 is left; in the region SG,a four-layer structure of the contact layer 1161, the resonant layer1162, and the barrier layer portions 11631 and 11632 is left; and in theregion SB, a three-layer structure of the contact layer 1161, theresonant layer 1162, and the barrier layer portion 11631 is left. Sincethe etching masks 181 to 183 themselves are etched in the etchingprocess, the thickness of the etching masks 181 to 183 is decreased.

Finally, by removing the etching masks 181 to 183, as shown in FIG. 19,by the foregoing remaining structures of the contact layer 1161, theresonant layer 1162, and the barrier layer portions 11631 to 11633, thelower electrode layers 116R, 116G, and 116B shown in FIG. 4 arecompleted as in the case shown in FIG. 11 in the foregoing secondembodiment.

In the method of manufacturing a display unit according to thisembodiment, the lower electrode layers 116R, 116G, and 116B can becontinuously formed with favorable reproducibility by using only theexisting thin film process. Therefore, as in the second embodiment, thedisplay unit 101 can be manufactured easily and stably.

In particular, in this embodiment, the barrier layer portions 11631 to11633 are formed by using the material having tolerance to the etchantdifferent from each other. Specifically the barrier layer portion 11632is formed by using the material having tolerance to the etchant forwet-etching the barrier layer portion 11633, and similarly the barrierlayer portion 11631 is formed by using the material having tolerance tothe etchant for wet-etching the barrier layer portion 11632. Therefore,the barrier layer portion 11632 functions as a stop layer to stopetching process when the barrier layer portion 11633 is etched.Similarly, the barrier layer portion 11631 functions as a stop layerwhen the barrier layer portion 11632 is etched. Therefore, the etchingprocess is prevented from being performed for the sections for whichetching process is not necessary, and therefore the lower electrodelayers 116R, 116G, and 116B can be high-precisely formed.

Further, in this embodiment, when the contact layer 1161, the resonantlayer 1162, and the barrier layer portions 11631 to 11633 are formed andlayered by sputtering, the series of layers is continuously formed inthe same vacuum environment. Therefore, differently from the case thatthe series of layers is formed through a plurality of vacuumenvironments, that is, vacuum environment and atmospheric environment,foreign objects in the atmospheric environment is prevented from beingmixed between each layer, and the interface of each layer can bemaintained clean.

Operation, action, and effect of the display unit of the presentinvention are similar to of the foregoing second embodiment.

In the second and the third embodiments, as shown in FIG. 5, in order toemit white light in the light emitting layer 1182, the light emittinglayer 1182 is structured as the three-layer structure, in which the redlight emitting layer 1182R, the green light emitting layer 1182G, andthe blue light emitting layer 1182B are layered. However, the structureof the light emitting layer 1182 is not limited thereto, and may befreely changed as long as the white light can be emitted. As a structureof the light emitting layer 1182 other than the foregoing three-layerstructure, for example, (1) a monolayer structure using a white lightemitting material capable of emitting white light, (2) a monolayerstructure using a mixed material, in which a red light emittingmaterial, a green light emitting material, and a blue light emittingmaterial are mixed, (3) a two-layer structure, in which a mixed lightemitting layer made of a mixed material of a red light emitting materialand a green light emitting material and other mixed light emitting layermade of a mixed material of a green light emitting material and a bluelight emitting material are layered and the like can be used. In theforegoing all cases, effects similar to of the second and thirdembodiments can be obtained.

Further, in the foregoing second and the third embodiments, white lightis generated in the light emitting layer 1182. However, color of lightgenerated in the light emitting layer 1182 is not limited thereto, andmay be freely changed, for example, as long as light generated in thelight emitting layer 1182 can be converted to the three color light er,eg, and eb by utilizing the difference in the resonant length among eachorganic EL device 130R, 130G, and 130B. In this case, effects similar toof the foregoing second and the third embodiments can be obtained.

Further, in the second and the third embodiments, the case in which thethicknesses DR, DG, and DB of the barrier layers 1163R, 1163G, and1163B, which compose each organic EL device 130R, 130G, and 130B, are inrelation of DR>DG>DB has been described. However, the relation among thethicknesses DR, DG, and DB is not necessarily limited thereto. As longas effects similar to of the foregoing second and third embodiments canbe obtained, the relation among the thicknesses DR, DG, and DB can befreely changed. In this regard, more specifically, the relation ofDR>DG>DB described in the foregoing second and third embodiments iseffected when the relation of mR=mG=mB (for example, mR=mG=mB=0) iseffected among mR, mG, and mB in the series of formulas (3B) to (3R).Therefore, according to setting of the values of mR, mG, and mB, therelation among the thicknesses DR, DG, and DB may be changed. As anexample, when the relation of mR (mG)≠mB (for example, mR=mG=0, andmB=1) is effected among mR, mG, and mB, the relation of DB>DR>DG iseffected among the thicknesses DR, DG, and DB. In this case, inparticular, the thickness of the thickest barrier layer 1163B is about100 nm or more.

In the foregoing second and third embodiments, as shown in FIG. 3 andFIG. 4, the case in which the present invention is applied to the topemission type display unit has been described. However, applicable typeis not limited thereto, but for example, as shown in FIG. 20 and FIG.21, the present invention may be applied to a bottom emission typedisplay unit. FIG. 20 shows a cross sectional configuration of a bottomemission type display unit 102. FIG. 21 shows a model of a crosssectional structure of the organic EL devices 130R, 130G, and 130B andthe auxiliary wiring 140, which compose the display unit 102 shown inFIG. 20. The display unit 102 has a configuration almost similar to ofthe top emission type display unit 101 shown in FIG. 3, except that asshown in FIG. 20 mainly, (1) the TFT 112 (1121 to 1123) is arranged notcorrespondingly to the arrangement position of the organic EL device 130(130R, 130G, and 130B) but arranged so that the TFT 112 is shifted fromthe position corresponding to the organic EL device 130, (2) the colorfilter 152 is arranged between the driving substrate 111 and the TFT112, the interlayer insulating layer 113, and (3) as shown in FIG. 21,the thicknesses of the resonant layers 1162R, 1162G, and 1162B arethinner than the thickness of the upper electrode layer 119. In thedisplay unit 102, the organic EL devices 130R, 130G, and 130B emit lighter, eg, and eb resonated between the resonant layers 1162R, 1162G, and1162B and the upper electrode layer 119 through the lower electrodelayers 116R, 116G, and 116B. The thicknesses of the resonant layers1162R, 1162G, and 1162B in this case are about from 1 nm to 50 nm, andthe thickness of the upper electrode layer 119 is about from 100 nm to300 nm. In the bottom emission type display unit 102, for example,instead that the protective layer 120, the adhesive layer 160, and thesealing panel 150 (sealing substrate 151) are included as shown in FIG.20, in some cases a hollow sealing cap containing deoxidizer may beincluded. In the bottom emission type display unit 102, effects similarto of the top emission type display unit 101 described in the second andthe third embodiments can be also obtained.

Further, in the foregoing second and third embodiments, the case inwhich the organic light emitting unit of the present invention isapplied to the organic EL display as a display unit has been described.However, the application is not limited thereto, and for example, theorganic light emitting unit of the present invention may be applied to adisplay unit other than the organic EL display. Needless to say, theorganic light emitting unit of the present invention can be applied toequipment other than display units, for example. As “equipment otherthan display units,” for example, a lighting system or the like can becited. In such a case, effects similar to of each embodiment describedabove can be obtained.

Next, manufacturing procedures of display units of specific examples ofthe present invention and comparative examples relative to the exampleswill be described, and then evaluation results thereof will bedescribed.

EXAMPLE 1

In Example 1, the top emission type display unit 1 for performing fullcolor display, which has been described with reference to FIG. 1, wasfabricated as follows.

First, on the substrate 2 made of a glass plate, the lower electrode 4made of chromium (film thickness as about 100 nm) as an anode becoming amirror, and the transparent conductive layers 5B, 5G, and 5R made of ITOwith each film thickness were pattern-formed. Next, a cell for organicEL device, in which regions other than light emitting regions of 2 mm×2mm in the surface central portions of the transparent conductive layers5B, 5G, and 5R were masked by an insulating film (not shown) wasfabricated. Next, a metal mask having an aperture over the exposedportions of the transparent conductive layers 5B, 5G, and 5R becomingeach light emitting region was arranged over the substrate 2 inproximity thereto, and the function layer 6 of the organic EL devicehaving the light emitting spectrum through blue, green, and red wasformed on the transparent conductive layers 5B, 5G, and 5R and theinsulating film by vacuum vapor deposition method under vacuum of 10⁻⁴Pa or less. After that, as a cathode becoming a half minor, the upperelectrode 7 was formed by depositing a thin film being 12 nm thick at aco-deposition ratio of Mg:Ag=10:1, and further depositing ITO being 150nm thick so that the reflectance was in the range from 0.1% to less than50%. Thereby, the display unit 1 of Example 1 was obtained. Thereflectance of the cathode as a half mirror was 45% with respect tolight with wavelength of 550 nm.

In the display unit of Example 1, the optical distance L, which was theminimum value among the optical distances L of the oscillation sectionmeeting the foregoing formula (1) was set so that extraction of light(blue: wavelength λ.=460 nm, green: wavelength λ=530 nm, and red:wavelength λ=630 nm) extracted from each organic EL device 3B, 3G, and3R became the maximum. That is, the optical distance Lt and Lf in theforegoing formula (2) were set so that the value of m in the formula (1)became m (blue)=0, m (green)=0, and m (red)=0. In this case, the filmthickness of the function layer 6 was 73 nm, and the optical distance Ltof each transparent conductive layer 5B, 5G, and 5R was set to Lt(blue)=10 nm, Lt (green)=41 nm, and Lt (red)=75 nm so that the formula(2) was met.

EXAMPLE 2

The display unit 1 was fabricated as in Example 1, except that theoptical distances Lt and Lf were set so that the value of m became m(blue)=1, m (green)=0, and m (red)=0, that is, the film thickness of thefunction layer 6 was 80 nm, the film thickness of the cathode was 9 nm,and the optical distance Lt was Lt (blue)=110 nm, Lt (green)=10 nm, andLt (red)=44 nm. The reflectance of the cathode in this case was 30% withrespect to light with wavelength of 550 nm.

EXAMPLE 3

The display unit 1 was fabricated as in Example 1, except that theoptical distances Lt and Lf were set so that the value of m became m(blue)=1, m (green)=1, and m (red)=0, that is, the film thickness of thefunction layer 6 was 105 nm, the film thickness of the cathode was 6 nm,and the optical distance Lt was Lt (blue)=85 nm, Lt (green)=135 nm, andLt (red)=10 nm. The reflectance of the cathode in this case was 15% withrespect to light with wavelength of 550 nm.

EXAMPLE 4

The display unit 1 was fabricated as in Example 1, except that theoptical distances Lt and Lf were set so that the value of m became m(blue)=1, m (green)=1, and m (red)=1, that is, the film thickness of thefunction layer 6 was 175 nm, the film thickness of the cathode was 6 nm,and the optical distance Lt was Lt (blue)=10 nm, Lt (green)=65 nm, andLt (red)=130 nm. The reflectance of the cathode in this case was 15%with respect to light with wavelength of 550 nm.

EXAMPLE 5

The display unit 1 was fabricated as in Example 1, except that theoptical distances Lt and Lf were set so that the value of m became m(blue)=2, m (green)=1, and m (red)=1, that is, the film thickness of thefunction layer 6 was 240 nm, the film thickness of the cathode was 6 nm,and the optical distance Lt was Lt (blue)=95 nm, Lt (green)=10 nm, andLt (red)=70 nm. The reflectance of the cathode in this case was 15% withrespect to light with wavelength of 550 nm.

COMPARATIVE EXAMPLE 1

In Comparative example 1, a bottom emission type display unit, in whichorganic EL devices in which the same function layer as of Example 1 wasused and multiple interference by light resonator structure was not usedwere arranged was fabricated as follows.

First, on a substrate 2 made of a glass plate, as a lower electrodebecoming an anode, ITO (film thickness was about 180 nm), which was atransparent conductive material was pattern-formed. Next, a cell fororganic EL device, in which regions other than light emitting regions of2 mm×2 mm in the surface central portions of the lower electrode made ofITO were masked by an insulating film was fabricated. Next, a metal maskhaving an aperture over the exposed sections of the lower electrodebecoming each light emitting region was arranged over the substrate inproximity thereto, and a function layer similar to of the examples wasformed. After that, as a cathode becoming a mirror, an upper electrodewas formed by depositing a thin film being 200 nm thick at aco-deposition ratio of Mg:Ag=10:1. Thereby, the display unit ofComparative example 1 was obtained.

COMPARATIVE EXAMPLE 2

A display unit was fabricated as in Example 1, except that the filmthickness of the cathode was 20 nm. The reflectance of the cathode inthis case was 60% with respect to light with wavelength of 550 nm.

For the display units of the examples and the comparative examplesfabricated as above, the spectrums of light extracted from each organicEL device were measured.

FIG. 22 shows spectrums of light extracted from each organic EL device3B, 3G, and 3R of the display unit of Example 1. From the figure, it wasconfirmed that light emitting intensity of the spectrum wassignificantly different among the blue, green, and red wavelengthregions, and light in the wavelength regions desired to be extractedfrom each organic EL device 3B, 3G, and 3R was selectively extracted bymultiple interference effects.

Further, FIG. 23 shows simulation results in the case that color filtersof each color which transmit only the wavelength of each color wereprovided correspondingly to each organic EL device 3B, 3G, and 3R on thelight emitting face side in the display unit of Example 1. FIG. 24 showstransmittance characteristics of the color filters of each color appliedto the display unit of Example 1. As shown in FIG. 23, it was confirmedthat by providing the color filters in combination, in the display unitof Example 1, unnecessary wavelength region component in the spectrumswas decreased, and color purity of blue, green, and red light extractedfrom each organic EL device 3B, 3G, and 3R was improved.

Meanwhile, FIG. 25 shows a spectrum of light extracted from each organicEL device in the display unit of Comparative example 1. From the figure,it was confirmed that each organic EL device provided on the displayunit of Comparative example 1 emitted white light having light emittingregions in all wavelength regions of blue, green, and red.

FIG. 26 shows simulation results in the case that each color filterwhich transmits only the wavelength of each color of blue, green, andred was provided correspondingly to each organic EL device on the lightemitting face side in the display unit of Comparative example 1. Eachcolor filter shall show transmittance characteristics as in FIG. 24. Asshown in FIG. 26, by providing the color filters for the display unit ofComparative example 1, color could be adjusted to blue, green, and red.However, compared to the case that the color filters were provided forthe display unit of Example 1 as shown in FIG. 23, the intensity of thespectrums was small and the color purity was poor.

Further, FIG. 27 shows each chromaticity value of (a) display unit ofExample 1, (b) display unit of Example 1 provided with the color filtersof FIG. 24, (c) display unit of Comparative example 1, and (d) displayunit of Comparative example 1 provided with the color filters of FIG.24, together with chromaticity values of (e) NTSC (National TelevisionSystem Committee).

From the chromaticity diagram, it was confirmed as (a) and (b) asfollows. That is, (a) even in the display unit of Example 1 not providedwith the color filters, favorable color chromaticity was shown; and (b)by providing the color filters for the display unit of Example 1,display with color chromaticity equal to NTSC was enabled.

FIG. 28 shows simulation results in the case that color filters wereprovided for the measured results of view angle dependence (front and 45deg) of the display unit of Example 1. FIG. 29 shows simulation resultsin the case that color filters were provided for the measured results ofview angle dependence (front and 45 deg) of the display unit ofComparative example 2. From these figures, it was confirmed as follows.That is, when the reflectance of the cathode as a half mirror was high,the view angle dependence of extracted light was large, that is, changeof luminance and chromaticity was large. Meanwhile, when the reflectanceof the cathode as a half mirror was low, the view angle dependence ofextracted light was small, that is, change of luminance and chromaticitywas small. Though detailed data is not shown, based on the results shownin FIG. 28 and FIG. 29, the view angle dependence was examined bysimulation while changing the reflectance of the cathode. In the result,it was confirmed that in order to appropriately reduce view angledependence of extracted light, the reflectance of the cathode shall bein the range from 0.1% to less than 50%.

Finally, Table 1 shows view angle dependence (front and 45 deg) ofluminance and chromaticity in the case that color filters were providedfor the display units of Examples 1 to 5 and the display unit ofComparative example 2, respectively. The luminance change ratio shown inTable 1 is a ratio between the luminance at 45 deg and the luminance atthe front (=luminance at 45 deg/luminance at the front).

From Table 1, it was confirmed that in the display units of Examples 1to 5, the luminance change ratio was larger than of the display unit ofComparative example 2, and therefore, the view angle dependence wassmall compared to of the display unit of Comparative example 2. Thoughdetailed data is not shown, based on the results shown in Table 1, viewangle dependence of luminance and chromaticity was similarly examinedwhile setting the optical distances Lt and Lf in the foregoing formula(2) so that the value of m (m (blue), m (green), and m (red)) in theforegoing formula (1) was changed, not only in the display units underthe conditions of m (blue), m (green), and m (red)=0,0,0; 1,0,0; 1,1,0;1,1,1; and 2,1,1 corresponding to Examples 1 to 5, but also in thedisplay units under the conditions of m (blue), m (green), and m(red)=2,2,1; and 2,2,2, the view angle dependence was small compared toof the display unit of Comparative example 2. From the foregoing seriesof results, it was confirmed that in the display unit of the presentinvention, favorable color reproducibility could be shown and the viewangle dependence of display color was small.

TABLE 1 Front 45 deg Luminance Luminance Chromaticity LuminanceChromaticity transition cd/m² x y cd/m² x y ratio Example 1 blue 2600.139 0.076 194 0.142 0.067 0.83 green 1240 0.267 0.649 1000 0.210 0.636red 270 0.677 0.321 275 0.664 0.336 Example 2 blue 342 0.133 0.078 1750.140 0.060 0.77 green 1381 0.237 0.676 1032 0.151 0.628 red 473 0.6790.318 475 0.657 0.341 Example 3 blue 323 0.134 0..75 174 0.144 0.0480.78 green 857 0.295 0.659 665 0.157 0.683 red 452 0.675 0.325 435 0.6650.335 Example 4 blue 328 0.133 0.079 185 0.143 0.050 0.77 green 9240.265 0.652 655 0.163 0.639 red 288 0.683 0.314 345 0.660 0.339 Example5 blue 244 0.130 0.078 122 0.150 0.037 0.77 green 919 0.279 0.647 6780.174 0.648 red 337 0.790 0.318 349 0.658 0.341 Comparative blue 1460.146 0.047 92 0.148 0.046 0.66 example 2 green 1000 0.197 0.694 6440.147 0.611 red 266 0.677 0.323 193 0.648 0.352

1. A display unit comprising a plurality of light emitting devices inwhich a function layer including at least a light emitting layer issandwiched between a mirror made of a light reflective material and alight semi-transmissive half mirror, and which have a resonatorstructure for resonating light emitted in the light emitting layer byusing a space between the mirror and the half mirror as a resonantsection and extracting the light from the half mirror side are arrangedon a substrate, wherein in the respective light emitting devices, thelight emitting layer is made of an identical layer, and the opticaldistance of the resonant section between the mirror and the half mirroris set to a plurality of different values.
 2. The display unit accordingto claim 1, wherein in the plurality of light emitting devices, thefunction layer including the light emitting layer is made of anidentical layer.
 3. The display unit according to claim 1, wherein thelight emitting layer emits light in blue, green, and red wavelengthregions, and in the respective light emitting devices, an opticaldistance is set so that extraction of light in blue, green, or redwavelength region becomes a maximum, respectively.
 4. The display unitaccording to claim 1, wherein the mirror and the half mirror are used asan electrode.
 5. The display unit according to claim 1, wherein atransparent conductive layer is provided between the mirror and the halfmirror, and the optical distance is adjusted by the transparentconductive layer.
 6. The display unit according to claim 1, whereinwhere a phase shift generated when light generated in the light emittinglayer is reflected on the both ends of the resonant section is cpradian, an optical distance of the resonant section is L, and a peakwavelength of the spectrum of light desired to be extracted among thelight is λ, the optical distance L is in a range that satisfies afollowing formula (1):(2L)/λ+φ/(2π)=m, where m is an integer   (1).
 7. The display unitaccording to claim 6, wherein a transparent conductive layer is providedbetween the mirror and the half mirror, and where an optical distance ofthe transparent conductive layer is Lt, and an optical distance of thefunction layer including the light emitting layer is Lf, the opticaldistance Lt of the transparent conductive layer of the respective lightemitting devices is set to satisfy a following formula (2):Lt=L−Lf   (2).
 8. The display unit according to claim 1, wherein a colorfilter for transmitting light in the wavelength regions, which isresonated in the resonant section and is extracted from the half mirrorside is provided above the half mirror.
 9. The display unit according toclaim 2, wherein the light emitting layer emits light in blue, green,and red wavelength regions and, in the respective light emittingdevices, the optical distance is set so that extraction of light inblue, green, or red wavelength region becomes the maximum, respectively.10. The display unit according to claim 9, wherein a color filter fortransmitting light in the wavelength regions, which is resonated in theresonant section and is extracted from the half mirror side is providedabove the half mirror.
 11. The display unit according to claim 9,wherein the mirror and the half mirror are used as an electrode, and atransparent conductive layer is provided between the mirror and the halfmirror, and the optical distance is adjusted by the transparentconductive layer.
 12. The display unit according to claim 11, wherein acolor filter for transmitting light in the wavelength regions, which isresonated in the resonant section and is extracted from the half mirrorside is provided above the half mirror.
 13. The display unit accordingto claim 9, wherein the mirror and the half mirror are used as anelectrode, and where a phase shift generated when light generated in thelight emitting layer is reflected on the both ends of the resonantsection is φ radian, an optical distance of the resonant section is L,and a peak wavelength of the spectrum of light desired to be extractedamong the light is λ, the optical distance L is in a range satisfying afollowing formula (1).(2L)/λ+φ/(2π)=m, where m is an integer   (1).
 14. The display unitaccording to claim 13, wherein a color filter for transmitting light inthe wavelength regions, which is resonated in the resonant section andis extracted from the half mirror side is provided above the halfmirror.
 15. The display unit according to claim 13, wherein atransparent conductive layer is provided between the mirror and the halfmirror, and where an optical distance of the transparent conductivelayer is Lt, and an optical distance of the function layer including thelight emitting layer is Lf, the optical distance Lt of the transparentconductive layer of the respective light emitting devices is set to meetthe following formula (2).Lt=L−Lf   (2).
 16. The display unit according to claim 15, wherein acolor filter for transmitting light in the wavelength regions, which isresonated in the resonant section and is extracted from the half mirrorside is provided above the half mirror.
 17. The display unit accordingto claim 1, wherein the reflectance of the half mirror ranges from 0.1%to less than 50%.
 18. The display unit according to claim 17, wherein acolor filter for transmitting light in the wavelength regions, which isresonated in the resonant section and is extracted from the half mirrorside is provided above the half mirror.
 19. The display unit accordingto claim 17, wherein the mirror and the half mirror are used as anelectrode, and a transparent conductive layer is provided between themirror and the half mirror, and the optical distance is adjusted by thetransparent conductive layer.
 20. The display unit according to claim19, wherein a color filter for transmitting light in the wavelengthregions, which is resonated in the resonant section and is extractedfrom the half mirror side is provided above the half mirror.
 21. Thedisplay unit according to claim 17, wherein the mirror and the halfmirror are used as an electrode, and where a phase shift generated whenlight generated in the light emitting layer is reflected on the bothends of the resonant section is φ radian, an optical distance of theresonant section is L, and a peak wavelength of the spectrum of lightdesired to be extracted among the light is λ, the optical distance L isin a range satisfying a following formula (1):(2L)/λ+φ/(2π)=m, where m is an integer   (1).
 22. The display unitaccording to claim 21, wherein a color filter for transmitting light inthe wavelength regions, which is resonated in the resonant section andis extracted from the half mirror side is provided above the halfmirror.
 23. The display unit according to claim 21, wherein atransparent conductive layer is provided between the mirror and the halfmirror, and where an optical distance of the transparent conductivelayer is Lt, and an optical distance of the function layer including thelight emitting layer is Lf, the optical distance Lt of the transparentconductive layer of the respective light emitting devices is set tosatisfy a following formula (2):Lt=L−Lf   (2).
 24. The display unit according to claim 23, wherein acolor filter for transmitting light in the wavelength regions, which isresonated in the resonant section and is extracted from the half mirrorside is provided above the half mirror.
 25. The display unit accordingto claim 17, wherein a color filter for transmitting light in thewavelength regions, which is resonated in the resonant section and isextracted from the half mirror side is provided above the half mirror,the mirror and the half mirror are used as an electrode, a transparentconductive layer is provided between the mirror and the half mirror,where a phase shift generated when light generated in the light emittinglayer is reflected on the both ends of the resonant section is φ radian,an optical distance of the resonant section is L, and a peak wavelengthof the spectrum of light desired to be extracted among the light is λ,the optical distance L is in a range satisfying a following formula (1),and where an optical distance of the transparent conductive layer is Lt,and an optical distance of the function layer including the lightemitting layer is Lf, the optical distance Lt of the transparentconductive layer of the respective light emitting devices is set tosatisfy a following formula (2).(2L)/λ+φ/(2π)=m, where m is an integer   (1)Lt=L−Lf   (2).
 26. The display unit according to claim 25, wherein theoptical distances Lt and Lf in the formula (2) are set so that the valueof m in the formula (1) meets m=0 for the light emitting device of thelight emitting devices for emitting blue light; m=0 for the lightemitting device of the light emitting devices for emitting green light;and m=0 for the light emitting device of the light emitting devices foremitting red light.
 27. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=1 for the light emitting device ofthe light emitting devices for emitting blue light; m=0 for the lightemitting device of the light emitting devices for emitting green light;and m=0 for the light emitting device of the light emitting devices foremitting red light.
 28. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=1 for the light emitting device ofthe light emitting devices for emitting blue light; m=1 for the lightemitting device of the light emitting devices for emitting green light;and m=0 for the light emitting device of the light emitting devices foremitting red light.
 29. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=1 for the light emitting device ofthe light emitting devices for emitting blue light; m=1 for the lightemitting device of the light emitting devices for emitting green light;and m=1 for the light emitting device of the light emitting devices foremitting red light.
 30. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=2 for the light emitting device ofthe light emitting devices for emitting blue light; m=1 for the lightemitting device of the light emitting devices for emitting green light;and m=1 for the light emitting device of the light emitting devices foremitting red light.
 31. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=2 for the light emitting device ofthe light emitting devices for emitting blue light; m=2 for the lightemitting device of the light emitting devices for emitting green light;and m=1 for the light emitting device of the light emitting devices foremitting red light.
 32. The display unit according to claim 25, whereinthe optical distances Lt and Lf in the formula (2) are set so that thevalue of m in the formula (1) meets m=2 for the light emitting device ofthe light emitting devices for emitting blue light; m=2 for the lightemitting device of the light emitting devices for emitting green light;and m=2 for the light emitting device of the light emitting devices foremitting red light.
 33. A method of manufacturing a display unit,comprising forming a plurality of light emitting devices in which afunction layer including at least a light emitting layer is sandwichedbetween a mirror made of a light reflective material and a lightsemi-transmissive half mirror, and which is made as a resonant sectionof a resonator structure for resonating light generated in the lightemitting layer between the mirror and the half mirror, wherein the lightemitting devices are arranged and formed on a substrate, and whereinafter the mirror or the half mirror is formed in formation regions ofthe respective light emitting devices on the substrate, a step ofpattern-forming transparent conductive films with an optical distancedifferent from each other and a step of forming the light emitting layerin block are performed in any order.
 34. The method of manufacturing adisplay unit according to claim 33, wherein a step of forming thefunction layer including the light emitting layer in block in theformation regions of the respective light emitting devices on thesubstrate is performed.
 35. The method of manufacturing a display unitaccording to claim 33, wherein a step of forming the half mirror so thatthe reflectance is in the range from 0.1% to less than 50% is performed.36. The method of manufacturing a display unit according to claim 35,wherein a step of forming the function layer including the lightemitting layer in block in the formation regions of the respective lightemitting devices on the substrate is performed.
 37. A method ofmanufacturing an organic light emitting unit comprising forming threeorganic light emitting devices provided on a substrate, wherein thethree organic light emitting devices have a structure in which a firstelectrode layer, a layer including a light emitting layer, and a secondelectrode layer are layered from the substrate side, and convert lightgenerated in the light emitting layer to light of three colors differentfrom each other and emit the converted light, wherein a step of formingthe first electrode layer so that the first electrode layer has astructure in which a contact layer for improving contact characteristicswith the substrate, a resonant layer for resonating light generated inthe light emitting layer between the resonant layer and the secondelectrode layer, and a barrier layer for protecting the resonant layerare layered from the substrate side is included, and the thickness ofthe barrier layer is different from each other among the three organiclight emitting devices.
 38. The method of manufacturing an organic lightemitting unit according to claim 37, wherein the step of forming thefirst electrode layer includes the steps of: layering the contact layer,the resonant layer, and a first barrier layer portion composing part ofthe barrier layer in this order over the substrate; pattern-forming afirst mask on a first region of the first barrier layer portion where afirst organic light emitting device of the three organic light emittingdevices is to be formed; forming a second barrier layer portioncomposing another part of the barrier layer over the first mask and theperipheral first barrier layer portion; pattern-forming a second mask ona second region of the second barrier layer portion where a secondorganic light emitting device of the three organic light emittingdevices is to be formed; forming a third barrier layer portion composingstill another part of the barrier layer over the second mask and theperipheral second barrier layer portion; pattern-forming a third mask ona third region of the third barrier layer portion where a third organiclight emitting device of the three organic light emitting devices is tobe formed; and continuously etching and patterning the contact layer,the resonant layer, and the first, the second, and the third barrierlayer portions by using the first, the second, and the third masks, andthe barrier layer of the first electrode layer is formed from the firstbarrier layer portion in the first region, is formed from the first andthe second barrier layer portions in the second region, and is formedfrom the first, the second, and the third barrier layer portions in thethird region.
 39. The method of manufacturing an organic light emittingunit according to claim 38, wherein the first, the second, and the thirdorganic light emitting devices are made to emit blue light, green light,and red light, respectively.
 40. The method of manufacturing an organiclight emitting unit according to claim 37, wherein the step of formingthe first electrode layer includes the steps of: layering the contactlayer, the resonant layer, and a first, a second, and a third barrierlayer portions composing the barrier layer in this order over thesubstrate; pattern-forming a first mask on a first region of the thirdbarrier layer portion where a first organic light emitting device of thethree organic light emitting devices is to be formed; leaving the thirdbarrier layer portion in the first region and exposing the secondbarrier layer portion in the peripheral region of the first region byetching and patterning the third barrier layer portion by using thefirst mask; pattern-forming a second mask on a second region of theexposed face of the second barrier layer portion where a second organiclight emitting device of the three organic light emitting devices is tobe formed; leaving the second barrier layer portion in the first and thesecond regions and exposing the first barrier layer portion in theperipheral region of the first and the second regions by etching andpatterning the second barrier layer portion by using the first masktogether with the second mask; pattern-forming a third mask on a thirdregion of the exposed face of the first barrier layer portion where athird organic light emitting device of the three organic light emittingdevices is to be formed; and leaving the first barrier layer portion inthe first, the second, and the third regions by continuously etching andpatterning the contact layer, the resonant layer, and the first barrierlayer portion by using the first and the second masks together with thethird mask, and the barrier layer of the first electrode layer is formedfrom the first, the second, and the third barrier layer portions in thefirst region, is formed from the first and the second barrier layerportions in the second region, and is formed from the first barrierlayer portion in the third region.
 41. The method of manufacturing anorganic light emitting unit according to claim 40, wherein the first,the second, and the third organic light emitting devices are made toemit red light, green light, and blue light, respectively.
 42. Themethod of manufacturing an organic light emitting unit according toclaim 37, wherein the barrier layer is formed by using a lighttransmissible material containing at least one metal from the groupconsisting of indium, tin, zinc, cadmium, titanium, chromium, gallium,and aluminum; an alloy of the metal; a metal oxide thereof; and a metalnitride thereof.
 43. The method of manufacturing an organic lightemitting unit according to claim 37, wherein the barrier layer is formedby using a light transmissible material containing at least one metaloxide from the group consisting of indium tin oxide, indium zinc oxide,indium oxide, tin oxide, zinc oxide, cadmium oxide, titanium oxide, andchromium oxide.
 44. The method of manufacturing an organic lightemitting unit according to claim 37, wherein the contact layer is formedby using at least one metal from the group consisting of chromium,indium, tin, zinc, cadmium, titanium, aluminum, magnesium, andmolybdenum; an alloy of the metal; a metal oxide thereof; or a metalnitride thereof.
 45. The method of manufacturing an organic lightemitting unit according to claim 37, wherein the resonant layer isformed by using silver or an alloy containing silver.
 46. The method ofmanufacturing an organic light emitting unit according to claim 37,wherein the resonant layer is formed by using an alloy containing silverand at least one from the group consisting of palladium, neodymium,samarium, yttrium, cerium, europium, gadolinium, terbium, dysprosium,erbium, ytterbium, scandium, ruthenium, copper, and gold.
 47. The methodof manufacturing an organic light emitting unit according to claim 37,wherein a step of forming a planarizing layer for flattening the baseregion on which the three organic light emitting devices are to beformed is provided for the substrate is included, and the contact layeris formed on the planarizing layer.